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2SD1964

Panasonic Semiconductor
Part Number 2SD1964
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SD1964 Silicon NPN epitaxial planar type For power switching Unit: mm 0.7±0.1 s Features q q q q 1...
Datasheet PDF File 2SD1964 PDF File

2SD1964
2SD1964

Overview
Power Transistors 2SD1964 Silicon NPN epitaxial planar type For power switching Unit: mm 0.
7±0.
1 s Features q q q q 10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2 φ3.
1±0.
1 1.
4±0.
1 4.
2±0.
2 Low collector to emitter saturation voltage VCE(sat) Satisfactory linearity of foward current transfer ratio hFE Large collector current IC Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 130 80 7 25 15 50 2 150 –55 to +150 Unit V V V A A W ˚C ˚C Solder Dip Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 14.
0±0.
5 4.
0 s Absolute Maximum Ratings 16.
7±0.
3 7.
5±0.
2 1.
3±0.
2 0.
8±0.
1 0.
5 +0.
2 –0.
1 2.
54±0.
25 5.
08±0.
5 1 2 3 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff cur...


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