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2SD1970

Hitachi Semiconductor
Part Number 2SD1970
Manufacturer Hitachi Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description 2SD1970 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1. Emitter 2. Collect...
Datasheet PDF File 2SD1970 PDF File

2SD1970
2SD1970

Overview
2SD1970 Silicon NPN Epitaxial Application Low frequency power amplifier Outline TO-126 MOD 2 3 1.
Emitter 2.
Collector 3.
Base ID 32 kΩ (Typ) 0.
4 kΩ (Typ) 1 1 2 3 2SD1970 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current C to E diode forward current Collector power dissipation Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC I C(peak) ID PC * Tj Tstg 1 Ratings 24 24 7 2 4 2 10 150 –55 to +150 Unit V V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current Symbol V(BR)CEO VCEO(sus) V(BR)EBO I CBO I CEO DC current transfer ratio hFE hFE Collector to emitter saturation voltage Base to emitter saturation voltage C to E diode forward voltage Note: 1.
Pulse test.
VCE(sat) VBE(sat) VD Min 24 ...


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