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2SD1974

Part Number	2SD1974
Manufacturer	Hitachi Semiconductor
Description	Silicon NPN Transistor
Published	Apr 3, 2005
Detailed Description	2SD1974 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 3 2 1 2, 4 4 ID 1. Base 2....
Datasheet	2SD1974 PDF File

Overview

2SD1974 Silicon NPN Epitaxial Application Low frequency power amplifier Outline UPAK 1 3 2 1 2, 4 4 ID 1.
Base 2.
Collector 3.
Emitter 4.
Collector (Flange) 3 2SD1974 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector peak current E to C diode forward current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC ic (peak) ID PC * Tj Tstg 1 Ratings 25 25 6 0.
8 1.
5 0.
6 1.
0 150 –55 to +150 Unit V V V A A A W °C °C 1.
Value on the alumina ceramic board (12.
5 x 20 x 0.
7 mm) Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 25 25 25 6 — — — 250 — — Typ — — — — — — — — — — Max — 35 35 — 0.
2 0.
5 0.
2 1200 0.
4 1.
5 V V Unit V V V V µA µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ I C = 0.
8 A, RBE = ∞, L = 20 mH I E = 10 µA, IC = 0 VCB = 20 V, IE = 0 VCE = 20 V, RBE = ∞ VEB = 5 V, IC = 0 VCE = 2 V, IC = 0.
1 A*1 I C = 0.
8 A, IB = 80 mA*1 I D = 0.
6 A*1 Collector to emitter breakdown V(BR)CEO voltage Collector to emitter sustaining voltage Emitter to base breakdown voltage Collector cutoff current VCEO(sus) V(BR)EBO I CBO I CEO Emitter cutoff current DC current transfer ratio Collector to emitter saturation voltage E to C diode forward voltage Notes: 1.
Pulse test 2.
Marking is “ES”.
I EBO hFE VCE(sat) VD 2 2SD1974 Maximum Collector Dissipation Curve 1.
2 Collector Power Dissipation PC (W) (on the alumina ceramic board) Collector Current IC (A) Area of Safe Operation 10 3 iC(peak) 1.
0 IC(max) 0.
3 0.
1 0.
03 Ta = 25°C 1 Shot Pulse D C O pe PW = 10 1 0.
8 m s m s ra tio n 0.
4 0 50 100 150 Ambient Temperature Ta (°C) 0.
01 0.
01 0.
3 1.
0 3 10 30 100 Collector to Emitter Voltage VCE (V) Area of Safe Operation of Emitter to Collector Diode 10 Ta = 25°C 1 Shot Pulse Collector Current IC (A) 1.
0 Typical Output Characteristics Diode Current ID (A) 8 0.
8 1.
8 ...

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