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2SD1975

Part Number	2SD1975
Manufacturer	Panasonic Semiconductor
Description	Silicon NPN Transistor
Published	Apr 3, 2005
Detailed Description	Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Complementary...
Datasheet	2SD1975 PDF File

Overview

Power Transistors 2SD1975, 2SD1975A Silicon NPN triple diffusion planar type For high power amplification Complementary to 2SB1317 and 2SB1317A 20.
0±0.
5 Unit: mm φ 3.
3±0.
2 5.
0±0.
3 3.
0 6.
0 s Features q q q q Satisfactory foward current transfer ratio hFE collector current IC characteristics Wide area of safe operation (ASO) High transition frequency fT Optimum for the output stage of a HiFi audio amplifier (TC=25˚C) Ratings 180 200 180 200 5 25 15 150 3.
5 150 –55 to +150 Unit V 26.
0±0.
5 10.
0 1.
5 2.
0 4.
0 1.
5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to 2SD1975 2SD1975A 2SD1975 Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg 20.
0±0.
5 2.
5 2.
0±0.
3 3.
0±0.
3 1.
0±0.
2 2.
7±0.
3 0.
6±0.
2 5.
45±0.
3 10.
9±0.
5 emitter voltage 2SD1975A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature V 1 2 3 V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter TOP–3L Package s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current 2SD1975 2SD1975A (TC=25˚C) Symbol ICBO IEBO hFE1 hFE2* hFE3 VBE VCE(sat) fT Cob Conditions VCB = 180V, IE = 0 VCB = 200V, IE = 0 VEB = 3V, IC = 0 VCE = 5V, IC = 20mA VCE = 5V, IC = 1A VCE = 5V, IC = 8A VCE = 5V, IC = 8A IC = 10A, IB = 1A VCE = 5V, IC = 0.
5A, f = 1MHz VCB = 10V, IE = 0, f = 1MHz 20 200 20 60 20 1.
8 2.
5 V V MHz pF 200 min typ max 50 50 50 Unit µA µA Forward current transfer ratio Base to emitter voltage Collector to emitter saturation voltage Transition frequency Collector output capacitance *h FE2 Rank classification Q 60 to 120 S 80 to 160 P 100 to 200 Rank hFE2 2.
0 1.
5 3.
0 1 Power Transistors PC — Ta 200 24 TC=25˚C (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) Without heat sink (PC=3.
5W) IB=1000mA 2SD1975, 2SD1975A IC — VCE 24 VCE=5V 20 IC — VBE Collector power dissipation PC (W) 20 Collector current IC (A) 150 16 Collector current IC (A) (1) 800mA 700mA 600...

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