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2SD1976

Hitachi Semiconductor
Part Number 2SD1976
Manufacturer Hitachi Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description 2SD1976 Silicon NPN Triple Diffused Application High voltage switching, igniter Feature • Built-in High voltage zener ...
Datasheet PDF File 2SD1976 PDF File

2SD1976
2SD1976

Overview
2SD1976 Silicon NPN Triple Diffused Application High voltage switching, igniter Feature • Built-in High voltage zener diode (300 V) • High Speed switching Outline TO-220AB 2 1 1.
Base 2.
Collector (Flange) 3.
Emitter ID 1.
6 kΩ (Typ) 160 Ω (Typ) 3 1 2 3 2SD1976 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Diode current Collector peak current Collector power dissipation Junction temperature Storage temperature Note: 1.
Value at TC = 25°C.
Symbol VCBO VCEO VEBO IC ID* 1 Rating 300 300 7 6 6 10 40 150 –55 to +150 Unit V V V A A A W °C °C I C(peak) PC * Tj Tstg 1 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter sustain voltage Emitter to base breakdown voltage Collector cutoff current DC current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Emitter to collector diode forward voltage Turn on t...


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