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2SD2459

Panasonic Semiconductor
Part Number 2SD2459
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description Transistor 2SD2459 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm s Features q q q ...
Datasheet PDF File 2SD2459 PDF File

2SD2459
2SD2459

Overview
Transistor 2SD2459 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm s Features q q q 4.
5±0.
1 1.
6±0.
2 1.
5±0.
1 1.
0–0.
2 +0.
1 High collector to emitter voltage VCEO.
Low collector to emitter saturation voltage VCE(sat).
Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
2.
6±0.
1 0.
4max.
45° 0.
4±0.
08 0.
5±0.
08 1.
5±0.
1 3.
0±0.
15 4.
0–0.
20 0.
4±0.
04 s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature * (Ta=25˚C) Ratings 150 150 5 1.
5 1 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C 1:Base 2:Collector 3:Emitter 3 2 1 Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg marking EIAJ:SC–62 Mini Power Type Package Marking symbol : 2E Printed circuit board: Copper foil area of thickness of 1.
7mm for the collector portion or more, and the board s Electrical Characteristics Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance *1h FE1 (Ta=25˚C) Symbol ICBO VCBO VCEO VEBO hFE1*1 hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = 75V, IE = 0 IC = 10µA, IE = 0 IC = 1mA, IB = 0 IE = 10µA, IC = 0 VCE = 2V, IC = 100mA VCE = 2V, IC = 500mA IC = 500mA, IB = 25mA*2 IC = 500mA, IB = 25mA*2 VCB = 10V, IE = –50mA, f = 200MHz VCB = 10V, IE = 0, f = 1MHz 150 150 5 120 40 0.
11 0.
8 90 12 *2 min typ max 0.
1 340 0.
3 1.
2 20 Pulse measurement Rank classification Rank hFE1 R 120 ~ 240 2ER S 170 ~ 340 2ES Marking Symbol 2.
5±0.
1 +0.
25 Unit µA V V V V V MHz pF 1 Transistor PC — Ta 1.
4 2SD2459 IC — VCE Collector to emitter saturation voltage VCE(sat) (V) 1200 Ta=25˚C 1000 10 3 1 0.
3 0.
1...


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