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2SD2461

Toshiba Semiconductor
Part Number 2SD2461
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications 2SD2461 Unit: mm · High DC cu...
Datasheet PDF File 2SD2461 PDF File

2SD2461
2SD2461

Overview
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications 2SD2461 Unit: mm · High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.
1 A) · Low saturation voltage: VCE (sat) = 0.
3 V (typ.
) (IC = 0.
5 A, IB = 5 mA) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 60 60 7 2 4 0.
4 1.
3 150 −55 to 150 Unit V V V A A W °C °C JEDEC ― JEITA ― TOSHIBA 2-8M1A Weight: 0.
55 g (typ.
) 1 2003-02-04 Electrical Characteri...


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