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2SD2462

Toshiba Semiconductor
Part Number 2SD2462
Manufacturer Toshiba Semiconductor
Description NPN Transistor
Published Apr 3, 2005
Detailed Description 2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit: mm • • • High DC...
Datasheet PDF File 2SD2462 PDF File

2SD2462
2SD2462

Overview
2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit: mm • • • High DC current gain: hFE (1) = 800 to 3200 (VCE = 5 V, IC = 0.
2 A) Low saturation voltage: VCE (sat) = 0.
4 V (typ.
) (IC = 1 A, IB = 10 mA) Complementary to 2SB1602 Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Rating 60 60 7 3 6 0.
6 1.
3 150 −55 to 150 Unit V V V A A W °C °C JEDEC JEITA ― ― TOSHIBA 2-8M1A Note: Using continuously under heavy loads (e.
g.
the application of high Weight: 0.
55 g (typ.
) temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the ab...


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