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2SD2486

Panasonic Semiconductor
Part Number 2SD2486
Manufacturer Panasonic Semiconductor
Description Silicon NPN Transistor
Published Apr 3, 2005
Detailed Description Power Transistors 2SD2486 Silicon NPN triple diffusion planar type For power amplification with high forward current tr...
Datasheet PDF File 2SD2486 PDF File

2SD2486
2SD2486

Overview
Power Transistors 2SD2486 Silicon NPN triple diffusion planar type For power amplification with high forward current transfer ratio 0.
7±0.
1 Unit: mm 10.
0±0.
2 5.
5±0.
2 2.
7±0.
2 4.
2±0.
2 φ3.
1±0.
1 1.
4±0.
1 1.
3±0.
2 0.
8±0.
1 0.
5 +0.
2 –0.
1 2.
54±0.
25 5.
08±0.
5 1 2 3 4.
2±0.
2 s Features q 16.
7±0.
3 14.
0±0.
5 q q High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package which can be installed to the heat sink with one screw (TC=25˚C) Ratings 60 60 7 8 4 2 25 2 150 –55 to +150 Unit V V V A A A W ˚C ˚C s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC IBP PC Tj Tstg Solder Dip 4.
0 7.
5±0.
2 1:Base 2:Collector 3:Emitter TO–220 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *h (TC=25˚C) Symbol ICBO IEBO VCEO hFE1 hFE2 VCE(sat) VBE(sat) fT ton tstg tf * Conditions VCB = 60V, IE = 0 VEB = 7V, IC = 0 IC = 10mA, IB = 0 VCE = 2V, IC = 0.
8A VCE = 2V, IC = 2A IC = 2A, IB = 50mA IC = 2A, IB = 50mA VCE = 10V, IC = 0.
5A, f = 10MHz IC = 2A, IB1 = 50mA, IB2 = –50mA, VCC = 50V min typ max 10 10 Unit µA µA V 60 500 60 0.
5 1.
5 70 0.
5 3.
6 1.
1 1000 2000 V V MHz µs µs µs FE1 Rank classification Q R Rank hFE1 500 to 1200 800 to 2000 1 Power Transistors PC — Ta 30 3.
0 (1) (1) TC=Ta (2) With a 100 × 100 × 2mm Al heat sink (3) With a 50 × 50 × 2mm Al heat sink (4) Without heat sink (PC=2W) 2SD2486 IC — VCE IB=5.
0mA 4.
0mA 2.
5 3.
0mA 2.
5mA 2.
0 2.
0mA 1.
5mA 1.
5 1.
0mA 1.
0 0.
5mA VCE(sat) — IC Collector to emitter saturation volta...


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