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DTC114TE

Motorola Inc
Part Number DTC114TE
Manufacturer Motorola Inc
Description NPN Silicon Surface Mount Transistor
Published Apr 3, 2005
Detailed Description MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by DTC114TE/D Preliminary Data Sheet Bias Resistor Transis...
Datasheet PDF File DTC114TE PDF File

DTC114TE
DTC114TE

Overview
MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by DTC114TE/D Preliminary Data Sheet Bias Resistor Transistor DTC114TE 3 2 1 NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor.
These digital transistors are designed to replace a single device and its external resistor bias network.
The BRT eliminates these individual components by integrating them into a single device.
The DTC114TE is housed in the SOT–416/SC–90 package which is ideal for low power surface mount applications where board space is at a premium.
• Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7 inch/3000 Unit Tape and Reel.
IN (1) R1 CASE 463–01, STYLE 1 SOT–416/SC–90 OUT (3) R1 = 10 kΩ GND (2) MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Collector–Base Voltage Collector–Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc DEVICE MARKING DTC114TE = 94 THERMAL CHARACTERISTICS Power Dissipation @ TA = 25°C(1) Operating and Storage Temperature Range Junction Temperature PD TJ, Tstg TJ *125 – 55 to +150 150 mW °C °C ELECTRICAL CHARACTERISTICS (TA = 25°C) Characteristic Collector–Base Breakdown Voltage (IC = 50 µAdc) Collector–Emitter Breakdown Voltage (IC = 1.
0 mAdc) Emitter–Base Breakdown Voltage (IE = 50 µAdc) Collector–Base Cutoff Current (VCB = 50 Vdc) Emitter–Base Cutoff Current (VEB = 4.
0 Vdc) DC Current Gain (IC = 1.
0 mAdc, VCE = 5 Vdc) Collector–Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.
0 mAdc) Input Resistance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) R1 Min 50 50 5.
0 — — 100 — 7.
0 Typ — — — — — 300 — 10 Max — — — 500 500 600 0.
3 13 Unit Vdc Vdc Vdc nAdc nAdc — Vdc kOhms 1.
Device mounted on a FR–4 glass epoxy printed circuit board using the minimum recommended...


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