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IMX4

Rohm
Part Number IMX4
Manufacturer Rohm
Description Dual Transistor
Published Apr 5, 2005
Detailed Description Transistors EMX4 / UMX4N / IMX4 High transition frequency (dual transistors) EMX4 / UMX4N / IMX4 zFeatures 1) Two 2S...
Datasheet PDF File IMX4 PDF File

IMX4
IMX4

Overview
Transistors EMX4 / UMX4N / IMX4 High transition frequency (dual transistors) EMX4 / UMX4N / IMX4 zFeatures 1) Two 2SC3837K chips in a EMT or UMT or SMT package.
2) High transition frequency.
(fT=1.
5GHz) 3) Low output capacitance.
(Cob=0.
9pF) zEquivalent circuits EMX4 / UMX4N (3) (2) (1) IMX4 (4) (5) (6) (4) (5) (6) (3) (2) (1) zDimensions (Unit : mm) EMX4 ROHM : EMT6 UMX4N Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power EMX4 / UMX4N dissipation IMX4 Junction temperature Storage temperature ∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits 30 20 3 50 150(TOTAL) 300(TOTAL) 150 −55 to +150 Unit V V V mA ∗1 mW ∗2 °C °C zPackage, marking, and packaging specifications Type Package Marking Code Basic ordering unit (pieces) EMX4 EMT6 X4 T2R 8000 UMX4N UMT6 X4 TR 3000 IMX4 SMT6 X4 T108 3000 ROHM : UMT6 EIAJ : SC-88 IMX4 ROHM : SMT6 EIAJ : SC-74 Each lead has same dimensions Each lead has same dimensions zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current DC current transfer ratio Collector-emitter saturation voltage Transition frequency Output capacitance Collector-base time constant Noise factor ∗Transition frequency of the device.
Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob rbb' Cc NF Min.
30 20 3 − − 56 − 600 − − − Typ.
− − − − − − − 1500 0.
95 6 4.
5 Max.
− − − 0.
5 0.
5 180 0.
5 − 1.
6 13 − Unit V V V µA µA − V MHz pF ps dB Conditions IC=10µA IC=1mA IE=10µA VCB=15V VEB=2V VCE/IC=10V/10mA IC/IB=20mA/4mA VCE/IE=10V/ −10mA, f=200MHz ∗ VCB/f=10V/1MHz, IE=0A VCB=10V, IC=10mA , f=31.
8MHz VCE=12V, IC=2mA , f=200MHz , Rg=50Ω This product might cause chip aging and breakdo...


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