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JC547

Part Number	JC547
Manufacturer	NXP
Description	NPN general purpose transistors
Published	Apr 7, 2005
Detailed Description	DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JC546; JC547; JC548 NPN general purpose transistors Product ...
Datasheet	JC547 PDF File

Overview

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 JC546; JC547; JC548 NPN general purpose transistors Product speciﬁcation Supersedes data of 1997 Mar 14 1999 Apr 27 Philips Semiconductors Product speciﬁcation NPN general purpose transistors FEATURES • Low current max.
100 mA) • Low voltage (max.
65 V).
APPLICATIONS • General purpose switching and amplification, e.
g.
driver and output stages of audio amplifiers.
DESCRIPTION NPN transistor in a TO-92; SOT54 plastic package.
PNP complements: JC556, JC557 and JC558.
1 handbook, halfpage 2 3 JC546; JC547; JC548 PINNING PIN 1 2 3 base collector emitter DESCRIPTION 2 1 3 MAM259 Fig.
1 Simplified outline (TO-92; SOT54) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO JC546 JC547 JC548 VCEO collector-emitter voltage JC546 JC547 JC548 VEBO emitter-base voltage JC546; JC547 JC548 IC ICM IBM Ptot Tstg Tj Tamb collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C open collector − − − − − − −65 − −65 6 5 100 200 200 500 +150 150 +150 V V mA mA mA mW °C °C °C open-base − − − 65 45 30 V V V PARAMETER collector-base voltage CONDITIONS open emitter − − − 80 50 30 V V V MIN.
MAX.
UNIT 1999 Apr 27 2 Philips Semiconductors Product speciﬁcation NPN general purpose transistors THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tj = 25 °C unless otherwise speciﬁed.
SYMBOL ICBO IEBO hFE PARAMETER collector cut-off current emitter cut-off current DC current gain JC547A JC546B; JC547B; JC548B DC current gain JC547A JC546B; JC547B; JC548B VCEsat VBEsat VBE Cc Ce fT F Notes 1.
VBEsat decreases by about 1.
7 mV/K with increasing temperature.
2.
VBE decreases by about 2 mV/K with increasing temperature.
collector-emitter saturation voltage base-emitter saturation voltage base-emitter voltag...

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