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SB140

Diodes Incorporated
Part Number SB140
Manufacturer Diodes Incorporated
Description 1.0A SCHOTTKY BARRIER RECTIFIER
Published Apr 8, 2005
Detailed Description SB120 - SB160 1.0A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · · Schottky Barrier Chip Guard Ring Die Construction...
Datasheet PDF File SB140 PDF File

SB140
SB140


Overview
SB120 - SB160 1.
0A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low Power Loss, High Efficiency High Surge Capability High Current Capability and Low Forward Voltage Drop Surge Overload Rating to 40A Peak For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications Plastic Material - UL Flammability Classification 94V-0 A B A C D DO-41 Plastic Dim Min 25.
40 4.
06 0.
71 2.
00 Max ¾ 5.
21 0.
864 2.
72 A B C D Mechanical Data · · · · · · Case: Molded Plastic Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band Weight: 0.
3 grams (approx.
) Mounting Position: Any Marking: Type Number All Dimensions in mm Maximum Ratings and Electrical Characteristics Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current (Note 1) (See Figure 1) Non-Repetitive Peak Forward Surge Current 8.
3ms single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage (Note 2) Peak Reverse Current at Rated DC Blocking Voltage (Note 2) @ IF = 1.
0A @ TA = 25°C @ TA = 100°C Symbol VRRM VRWM VR VR(RMS) IO IFSM VFM IRM RqJL RqJA Tj TSTG @ TA = 25°C unless otherwise specified SB120 20 14 SB130 30 21 SB140 40 28 1.
0 40 SB150 50 35 SB160 60 42 Unit V V A A 0.
50 0.
5 10 15 50 -65 to +125 -65 to +150 0.
70 5.
0 V mA °C/W °C/W Typical Thermal Resistance Junction to Lead (Note 1) Typical Thermal Resistance Junction to Ambient Operating Temperature Range Storage Temperature Range Notes: -65 to +150 °C 1.
Measured at ambient temperature at a distance of 9.
5mm from the case.
2.
Short duration test pulse used to minimize self-heating effect.
DS23022 Rev.
4 - 2 1 of 3 www.
diodes.
com SB120-SB160 10 I(O), AVERAGE FORWARD CURRENT (A) IF, IN...



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