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C1815

Toshiba Semiconductor
Part Number C1815
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 16, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applicatio...
Datasheet PDF File C1815 PDF File

C1815
C1815

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815 Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications 2SC1815 Unit: mm High voltage and high current: VCEO = 50 V (min), IC = 150 mA (max) • Excellent hFE linearity: hFE (2) = 100 (typ.
) at VCE = 6 V, IC = 150 mA : hFE (IC = 0.
1 mA)/hFE (IC = 2 mA) = 0.
95 (typ.
) • Low noise: NF = 1dB (typ.
) at f = 1 kHz • Complementary to 2SA1015 (O, Y, GR class) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 5 V Collector current Base current Collector power dissipation IC 150 mA IB 50 mA JEDEC TO-92 PC 400 mW JEITA SC-43 Junction temperature Storage temperature range Tj 125 °C Tstg −55~125 °C TOSHIBA 2-5F1B Weight: 0.
21 g (typ.
) Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage a...


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