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VR4N

Toshiba Semiconductor
Part Number VR4N
Manufacturer Toshiba Semiconductor
Description TOSHIBA Fast Recovery Diode Silicon Diffused Type High Speed Rectifier Applications (fast recovery)
Published Apr 16, 2005
Detailed Description TVR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR4J,TVR4N High Speed Rectifier Applications (fast recov...
Datasheet PDF File VR4N PDF File

VR4N
VR4N

Overview
TVR4J,TVR4N TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR4J,TVR4N High Speed Rectifier Applications (fast recovery) Unit: mm Repetitive Peak Reverse Voltage: VRRM = 600, 1000 V Average Forward Current: IF (AV) = 1.
2 A (Ta = 55°C) Reverse Recovery Time: trr = 20 µs Plastic Mold Type.
· · · · Maximum Ratings (Ta = 25°C) Characteristics Repetitive peak reverse voltage TVR4J TVR4N Symbol VRRM IF (AV) IFSM Tj Tstg Rating 600 1000 1.
2 100 (50 Hz) -40 to 150 -40 to 150 Unit V A A °C °C Average forward current (Ta = 55°C ) Peak one cycle surge forward current (non repetitive) Junction temperature Storage temperature range JEDEC JEITA TOSHIBA ― ― 3-4B1A Electrical Characteristics (Ta =...


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