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VCR2N

Vishay Siliconix
Part Number VCR2N
Manufacturer Vishay Siliconix
Description JFET Voltage-Controlled Resistors
Published Apr 16, 2005
Detailed Description VCR2N/4N/7N Vishay Siliconix JFET Voltage-Controlled Resistors PRODUCT SUMMARY Part Number VCR2N VCR4N VCR7N VGS(off) ...
Datasheet PDF File VCR2N PDF File

VCR2N
VCR2N

Overview
VCR2N/4N/7N Vishay Siliconix JFET Voltage-Controlled Resistors PRODUCT SUMMARY Part Number VCR2N VCR4N VCR7N VGS(off) Max (V) −7 −7 −5 V(BR)GSS Min (V) −25 −25 −25 rDS(on) Max (W) 60 600 8000 FEATURES D Continuous Voltage-Controlled Resistance D High Off-Isolation D High Input Impedance BENEFITS D Gain Ranging Capability/Wide Range Signal Attenuation D No Circuit Interaction D Simplified Drive APPLICATIONS D Variable Gain Amplifiers D Voltage Controlled Oscillator D AGC DESCRIPTION The VCR2N/4N/7N JFET voltage controlled resistors have an ac drain-source resistance that is controlled by a dc bias voltage (VGS) applied to their high impedance gate terminal.
Minimum rDS occurs when VGS = 0 V.
As VGS approaches the pinch-off voltage, rDS rapidly increases.
This series of junction FETs is intended for applications where the drain-source voltage is a low-level ac signal with no dc component.
Key to device performance is the predictable rDS change versus VGS bias where: r DS(@ V GS + 0) r DSbias [ V GS 1– V GS(off) Ť Ť These n-channel devices feature rDS(on) ranging from 20 to 8000 W .
All packages are hermetically sealed and may be processed per MIL-S-19500 (see Military Information).
TO-206AA (TO-18) TO-206AF (TO-72) S S C 1 1 4 2 D Top View 3 G and Case D 2 3 G Top View VCR7N VCR2N, VCR4N For applications information see AN105.
Document Number: 70293 S-41225—Rev.
F, 28-Jun-04 www.
vishay.
com 1 VCR2N/4N/7N Vishay Siliconix ABSOLUTE MAXIMUM RATINGSa Gate-Source, Gate-Drain Voltage .
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−25 V Gate Current .
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10 mA Power Dissipationb .
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300 mW Operating Junction Temperature Range .
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−55 to 175_C Storage Temperature .
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−65...


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