DatasheetsPDF.com

US1

NXP
Part Number US1
Manufacturer NXP
Description SMA ultra fast low-loss controlled avalanche rectifiers
Published Apr 16, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 US1 series SMA ultra fast low-loss controlled avalanche rect...
Datasheet PDF File US1 PDF File

US1
US1

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 US1 series SMA ultra fast low-loss controlled avalanche rectifiers Product specification 2000 Feb 14 Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers FEATURES • Glass passivated • High maximum operating temperature • Ideal for surface mount automotive applications • Low leakage current • Excellent stability • Guaranteed avalanche energy absorption capability • UL 94V-O classified plastic package • Shipped in 12 mm embossed tape • Marking: cathode, date code, type code • Easy pick and place.
olumns US1 series DESCRIPTION DO-214AC surface mountable package with glass passivated chip.
The well-defined void-free case is of a transfer-moulded thermo-setting plastic.
The small rectangular package has two J bent leads.
cathode band k a Top view Side view MSA474 Fig.
1 Simplified outline (DO-214AC) and symbol.
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VRRM US1A US1B US1D US1G US1J VR continuous reverse voltage US1A US1B US1D US1G US1J VRMS root mean square voltage US1A US1B US1D US1G US1J IF(AV) average forward current averaged over any 20 ms period; Ttp = 110 °C; see Fig.
2 − − − − − − 35 70 140 280 420 1 V V V V V A − − − − − 50 100 200 400 600 V V V V V PARAMETER repetitive peak reverse voltage − − − − − 50 100 200 400 600 V V V V V CONDITIONS MIN.
MAX.
UNIT 2000 Feb 14 2 Philips Semiconductors Product specification SMA ultra fast low-loss controlled avalanche rectifiers SYMBOL IFSM PARAMETER non-repetitive peak forward current CONDITIONS t = 8.
3 ms half sine wave; Tj = 25 °C prior to surge; VR = VRRMmax See Fig.
3 − MIN.
US1 series MAX.
25 A UNIT Tstg Tj storage temperature junction temperature −65 −65 +175 +175 °C °C ELECTRICAL CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL VF PARAMETER forward voltage US1A to US1G US1J IR trr Cd reverse current reverse recovery time diode capacitance...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)