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TVR1J

Part Number	TVR1J
Manufacturer	Toshiba Semiconductor
Description	TOSHIBA Fast Recovery Diode Silicon Diffused Type
Published	Apr 16, 2005
Detailed Description	TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications (fast recovery) U...
Datasheet	TVR1J PDF File

Overview

TVR1B,TVR1G,TVR1J TOSHIBA Fast Recovery Diode Silicon Diffused Type TVR1B,TVR1G,TVR1J TV Applications (fast recovery) Unit: mm Average Forward Current: IF (AV) = 0.
5 A (Ta = 65°C) Repetitive Peak Reverse Voltage: VRRM = 100, 400, 600 V Reverse Recovery Time: trr = 2.
0 µs · · · Maximum Ratings (Ta = 25°C) Characteristics TVR1B Repetitive peak reverse voltage TVR1G TVR1J Average forward current (Ta = 65°C) Peak one cycle surge forward current (non repetitive) Junction temperature Storage temperature range IF (AV) IFSM Tj Tstg VRRM Symbol Rating 100 400 600 0.
5 10 (50 Hz) -40~125 -40~125 A A °C °C V Unit JEDEC JEITA TOSHIBA ― ― 3-3C1A Electrical Characteristics (Ta = 25°C) Characteristics...

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