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TPS622

Toshiba Semiconductor
Part Number TPS622
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Apr 16, 2005
Detailed Description TOSHIBA Phototransistor Silicon NPN Epitaxial Planar TPS622(F) Opto-electronic Switch Optical Mouse Optical Touch Switch...
Datasheet PDF File TPS622 PDF File

TPS622
TPS622


Overview
TOSHIBA Phototransistor Silicon NPN Epitaxial Planar TPS622(F) Opto-electronic Switch Optical Mouse Optical Touch Switch • Compact side view epoxy resin package • High response speed: tr, tf = 6μs (typ.
) • Half value angle: θ1/2 = ±15° (typ.
) • Visible light cut type (black package) • Optimum in combination with infrared LED TLN117(F) with identical external dimensions.
TPS622(F) Unit in : mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Collector−emitter voltage VCEO 30 V Emitter−collector voltage VECO 5 V Collector current IC 50 mA Collector power dissipation Collector power dissipation derating (Ta > 25°C) Operating temperature range PC ΔPC / °C Topr 75 −1 −25~85 mW mW / °C °C TOSHIBA 0 – 3G1 Weight: 0.
1 g (typ.
) Storage temperature range Tstg −40~100 °C Soldering temperature (5s) Tsol 260 (Note 1) °C Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Soldering portion of lead: At least 2mm from the body of the device.
Opto-electrical Characteristics (Ta = 25°C) Characteristic Dark current Light current Collector−emitter saturation voltage Peak sensitivity wavelength Half value angle Switching time Rise time Fall time Symbol ID(ICEO) IL VCE(sat) λP θ1 2 tr tf Test Condition VCE = 24V, E = 0 E = 0.
1mW / cm2, VCE = 3V E = 0.
1mW / cm2, IL = 15μA ⎯ ⎯ (Note 2,3) VCC = 5V, IC = 2mA RL = 100Ω Min.
Typ.
Max.
⎯ 0.
005 0.
1 27 70 ⎯ ⎯ 0.
15 0.
4 ⎯ 870 ⎯ ⎯ ±15 ⎯ ⎯6⎯ ...


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