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TS420

STMicroelectronics
Part Number TS420
Manufacturer STMicroelectronics
Description Sensitive gate 4A SCRs
Published Apr 16, 2005
Detailed Description Features  On-state RMS current: 4 A  Repetitive peak off-state voltage (VDRM, VRRM) 600 V  Triggering gate current, I...
Datasheet PDF File TS420 PDF File

TS420
TS420

Overview
Features  On-state RMS current: 4 A  Repetitive peak off-state voltage (VDRM, VRRM) 600 V  Triggering gate current, IGT 0.
2 mA TS420 Sensitive gate 4 A SCRs Datasheet - production data Description Thanks to highly sensitive triggering levels, the device is suitable for all applications where the available gate current is limited, such as motor control for hand tools, kitchen aids, overvoltage crowbar protection for low power supplies among others.
Available in through-hole and surface-mount packages, they provide an optimized performance in a limited space area.
Table 1: Device summary Order code Sensitivity Package TS420-600B TS420-600H 0.
2 mA DPAK IPAK TS420-600T TO-220AB October 2017 DocID5203 Rev 6 This is information on a product in full production.
1/14 www.
st.
com Characteristics TS420 1 Characteristics Symbol IT(RMS) IT(AV) ITSM I2t dl/dt IGM PG(AV) VRGM Tstg Tj Table 2: Absolute ratings (limiting values) Parameter RMS on-state current (180 ° conduction angle) Average on-state current (180 ° conduction angle) Non repetitive surge peak on-state current tp = 8.
3 ms tp = 10 ms I2t value for fusing tp = 10 ms Critical rate of rise of on-state current IG = 10 mA, dlG / dt = 0.
1 A/µs f = 60 Hz Peak gate current tp = 20 µs Average gate power dissipation TC = 115°C TC = 115°C Tj initial = 25 °C Tj = 25 °C Tj = 125 °C Maximum peak reverse gate voltage Storage junction temperature range Maximum operating junction temperature Value 4 2.
5 33 30 4.
5 50 1.
2 0.
2 5 -40 to +150 -40 to +125 Unit A A A A2s A/µs A W V °C °C Table 3: Device timings Symbol Parameter Test conditions tGT Gate controlled turn on time tQ Circuit controlled turn off time ITM = 10 A, Tj = 25 °C, VD = VDRM(max.
), IGT = 10 mA, dIG/dt = 0.
2 A/μs, RG = 1 kΩ ITM = 8 A, Tj = 125 °C, VD = 67% VDRM(max.
), VR = 10 V, dIT/dt = 10 A/μs, dVD/dt = 2 V/μs, RG = 1 kΩ Value Unit 0.
5 (typ.
) µs 60 (typ.
) 2/14 DocID5203 Rev 6 TS420 Symbol IGT VGT VGD IH IL dV/dt VTM VT0...


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