DatasheetsPDF.com

TLP351

Toshiba Semiconductor
Part Number TLP351
Manufacturer Toshiba Semiconductor
Description Photocoupler
Published Apr 16, 2005
Detailed Description TOSHIBA Photocoupler IRED + Photo IC TLP351 Inverter for Air Conditioner IGBT/Power MOS FET Gate Drive Industrial Invert...
Datasheet PDF File TLP351 PDF File

TLP351
TLP351

Overview
TOSHIBA Photocoupler IRED + Photo IC TLP351 Inverter for Air Conditioner IGBT/Power MOS FET Gate Drive Industrial Inverter TLP351 Unit: mm The TOSHIBA TLP351 consists of an infrared emitting diode and an integrated photodetector.
This unit is 8-lead DIP package.
TLP351 is suitable for gate driving circuit of IGBT or power MOS FET.
Especially TLP351 is capable of “direct” gate drive of lower Power IGBTs.
• Peak output current: ±0.
6 A (max) • Guaranteed performance over temperature: −40 to 100°C • Supply current: 2 mA (max) • Power supply voltage: 10 to 30 V • Threshold input current : IF = 5 mA (max) • Switching time (tpLH/tpHL) : 700 ns (max) • Common mode transient immunity: ±10 kV/μs • Isolation voltage: 3750 Vrms • UL-recognized: UL 1577, File No.
E67349 • cUL-recognized: CSA Component Acceptance Service No.
5A File No.
E67349 • VDE-approved: EN 60747-5-5 (Note 1) TOSHIBA 11-10C4S Weight: 0.
54 g (typ.
) Note 1: When a VDE approved type is needed, please designate the Option(D4).
Truth Table Input H L LED ON OFF Tr1 ON OFF Tr2 OFF ON Output H L Schematic IF 2+ VF 3− (Tr1) ICC VCC 8 IO (Tr2) VO 6 GND 5 A 0.
1 μF bypass capacitor must be connected between pin 8 and 5.
© 2019 1 Toshiba Electronic Devices & Storage Corporation Pin Configuration (top view) 1 8 1: N.
C.
2: Anode 2 7 3: Cathode 4: N.
C.
5: GND 3 6 6: VO (output) 7: N.
C.
4 5 8: VCC Start of commercial production 2002-05 2019-06-24 Absolute Maximum Ratings (Ta = 25°C) TLP351 Characteristics Symbol Rating Unit Forward current Forward current derating (Ta ≥ 85°C) IF ∆IF/∆Ta 20 −0.
54 mA mA/°C Peak transient forward current (Note 1) IFP 1 A LE D Reverse voltage Power Dissipation VR 5 V PD 40 mW Power Dissipation Derating (Ta ≥ 85°C) ∆PD /°C -1.
0 mW/°C Junction temperature Tj 125 °C “H” peak output current “L” peak output current Output voltage (Note 2) (Note 2) IOPH IOPL VO −0.
6 A 0.
6 A 35 V Detector Supply voltage Output Power Dissipation ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)