DatasheetsPDF.com

RU2B

EIC discrete Semiconductors

FAST RECOVERY RECTIFIER DIODES

RU2 - RU2Z PRV : 200 - 800 Volts Io : 1.0 Ampere FEATURES : * * * * * * High current capability High surge current capab...


RU2B

EIC discrete Semiconductors


Octopart Stock #: O-340119

Findchips Stock #: 340119-F

Web ViewView RU2B Datasheet

File DownloadDownload RU2B PDF File




Description
RU2 - RU2Z PRV : 200 - 800 Volts Io : 1.0 Ampere FEATURES : * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency FAST RECOVERY RECTIFIER DIODES D2 0.161 (4.1) 0.154 (3.9) 1.00 (25.4) MIN. 0.284 (7.2) 0.268 (6.8) MECHANICAL DATA : * Cas
More View e : D2 Molded plastic * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Color band denotes cathode end * Mounting position : Any * Weight : 0.465 gram 0.034 (0.86) 0.028 (0.71) 1.00 (25.4) MIN. Dimensions in inches and ( millimeters ) Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Peak Reverse Voltage Maximum Peak Reverse Surge Voltage Maximum Average Forward Current Ta = 50 °C Maximum Peak Forward Surge Current ( 50 Hz, Half-cycle, Sine wave, Single Shot ) Maximum Forward Voltage at IF = 1 Amp. Maximum Reverse Current at VR = VRM Maximum Reverse Current at VR = VRM Maximum Reverse Recovery Time (Note 1) Junction Temperature Range Storage Temperature Range Ta = 25 °C Ta = 100 °C SYMBOL VRM VRSM IF(AV) IFSM VF IR IR(H) Trr TJ TSTG RU2Z 200 250 RU2 600 650 1.0 20 1.5 10 300 400 - 40 to + 150 - 40 to + 150 RU2B 800 850 UNIT V V A A V µA µA ns °C °C Notes : ( 1 ) Reverse Recovery Test Conditions : IF = 10 mA, IRP = 10 mA. Page 1 of 2 Rev. 01 : April 2, 2002 RATING AND CHARACTERISTIC CURVES ( RU2 - RU2Z ) FIG.1 - REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM 100 µF specimen 10 mA IF 0.1 IRP 200µS NOTE : IF = IRP = 10 mA TO 1 mA 10 mA IRP 20µS 100 Ω Trr FIG.2 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT 1.0 25 FIG.3 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD OUTPUT CURRENT, AMPERES 0.8 20 0.6 15 0.4 10 0.2 5 0 0 25 50 75 100 125 150 175 0 1 2 4 6 10 20 40 60 100 AMBIENT TEMPERATURE, ( °C) FIG.4 - TYPICAL FORWARD CHARACTERISTICS 50 NUMBER OF CYCLES AT 50Hz FIG.5 - TYPICAL REVERSE CHARACTERISTICS FORWARD CURRENT, AMPERES REVERSE CURRENT, MICROAMPERES 10 10 TJ = 100 °C 1.0 1.0 0.1 Ta = 25 °C 0.1 TJ = 25 °C 0.01 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 0.01 0 20 40 60 80 100 120 140 FORWARD VOLTAGE, VOLTS PERCENT OF RATED REVERSE VOLTAGE, (%) Page 2 of 2 Rev. 01 : April 2, 2002






Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)