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RD10ES


Part Number RD10ES
Manufacturer NEC
Title 400 mW DHD ZENER DIODE DO-34
Description NEC Type RD2.0ES to RD39ES Series are planar type diodes into DO-34 Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode) constructio...
Features
• DO-34 Glass sealed package This diode can be inserted into a PC board with a shorter pitch (5 mm) 5 mm Cathode indication 25 MIN. φ 2.0 MAX. 25 MIN.
• Planar process
• DHD (Double Heatsink Diode) construction
• VZ Applied E24 standard ORDERING INFORMATION RD2.0ES to RD39ES with suffix "AB1", "A...

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RD10E : RD2.0E~RD39E Zener diode Features 1. DO-35 Glass sealed package 2. Planar process 3. Vz applied E24 standard Applications Circuits for constant voltage, constant current, waveform clipper, surge absorber, etc. Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Forward Current If 150 mA Power Dissipation PV 400 mW Surge Reverse Power PRSM 100 W Junction Temperature Tj 175 ℃ Storage Temperature Tstg -65~+175 ℃ Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may .

RD10E : RD2.0E ~ RD39E VZ : 2.0 - 39 Volts PD : 500 mW FEATURES : * Complete 2.0 to 39 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free MECHANICAL DATA Case: DO-35 Glass Case Weight: approx. 0.13g SILICON ZENER DIODES DO - 35 0.079(2.0 )max. 0.020 (0.52)max. 1.00 (25.4) min. 0.150 (3.8) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS Rating at 25 °C ambient temperature unless otherwise specified Rating Power Dissipation Forward Current Junction Temperature Range Storage Temperature Range Symbol PD IF Tj Ts Value 500 200 - 55 to + 175 - 55 to + 175 Unit mW mA °C °C Page 1 of 4 Power Dissipation , PD (mW) De.

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RD10ES : RD2.0ES~RD39ES Zener diode Features 1. DO-34 Glass sealed package This diode can be inserted into a PC board with a shorter pitch(5mm) 2. Planar process 3. Vz applied E24 standard Applications Circuits for constant voltage, constant current, waveform clipper, surge absorber, etc. Absolute Maximum Ratings Tj=25℃ Parameter Forward Current Power Dissipation Surge Reverse Power Junction Temperature Storage Temperature Symbol If PV PRSM Tj Tstg Value 150 400 100 175 -65~+175 Unit mA mW W ℃ ℃ RD2.0ES~RD39ES Electrical Characteristics Tj=25℃ Type Number Suffix RD 2.0ES RD 2.2 ES RD 2.4 ES RD 2.7 ES RD 3.0 ES RD 3.3 ES RD 3.6 ES RD 3.9 ES RD 4.3 ES RD 4.7 ES RD 5.1 ES RD 5.6 ES RD 6.

RD10ES : TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 RD2.0ES SERIES ZENER DIODES VZ : 2.0 - 37.5Volts PD : 400 mW FEATURES : * High reliability * Low leakage current * Suitable for 5mm - pitch high speed automatical insertion * Pb / RoHS Free MECHANICAL DATA Case: DO-34 Glass Case Weight: approx. 0.093g DO - 34 Glass 0.078 (2.0 )max. Cathode Mark 0.017 (0.43)max. 1.00 (25.4) min. 0.118 (3.0) max. 1.00 (25.4) min. Dimensions in inches and ( millimeters ) ORDERING INFORMATION RD2.0ES to RD39ES with suffix "AB1", "AB2", or "AB3" should be applied for oders for suffix "AB" MAXIMUM RATINGS Rating at 25 °C ambient temperature unless otherwise specified Parameter Forward Rectifier Current.




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