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PT768

Part Number PT768
Manufacturer ETC
Title DIODE
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Datasheet PT768 PDF File







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PT76701 : This device is designed to have a fast transient response and be stable with 10 µF low ESR capacitors. This combination provides high performance at a reasonable cost. Because the PMOS device behaves as a low-value resistor, the dropout voltage is very low (typically 230 mV at an output current of 1 A for the TPS76750) and is directly proportional to the output current. Additionally, since the PMOS pass element is a voltage-driven device, the quiescent current is very low and independent of output loading (typically 85 µA over the full range of output current, 0 mA to 1 A). These two key specifications yield a significant improvement in operating life for battery-powered systems. This LDO f.

PT76718 : This device is designed to have a fast transient response and be stable with 10 µF low ESR capacitors. This combination provides high performance at a reasonable cost. Because the PMOS device behaves as a low-value resistor, the dropout voltage is very low (typically 230 mV at an output current of 1 A for the TPS76750) and is directly proportional to the output current. Additionally, since the PMOS pass element is a voltage-driven device, the quiescent current is very low and independent of output loading (typically 85 µA over the full range of output current, 0 mA to 1 A). These two key specifications yield a significant improvement in operating life for battery-powered systems. This LDO f.

PT76727 : This device is designed to have a fast transient response and be stable with 10 µF low ESR capacitors. This combination provides high performance at a reasonable cost. Because the PMOS device behaves as a low-value resistor, the dropout voltage is very low (typically 230 mV at an output current of 1 A for the TPS76750) and is directly proportional to the output current. Additionally, since the PMOS pass element is a voltage-driven device, the quiescent current is very low and independent of output loading (typically 85 µA over the full range of output current, 0 mA to 1 A). These two key specifications yield a significant improvement in operating life for battery-powered systems. This LDO f.

PT76S12 : http://www.Datasheet4U.com .

PT76S16 : http://www.Datasheet4U.com .

PT76S8 : DIODE MO DULE FEATURES * Isolated Base * 3 Phas e Bridge Circuit * DesignedPow er Circuit Board * High Surge C apabi lity * UL Recognize d, File No. E1871 84 75A/800V PT76S8 OUTLINE DRAWING TYPICAL APPLIC ATIONS * Rect ified For General Use Maximum Rat ings Parameter Repetitive Peak Reverse Voltage *1 Non Re petitive Peak Reverse Voltage *1 Approx Net W eight:180g Symbol VRRM VRSM Type / Gr ade PT76S8 800 1000 Unit V Max Rate d Valu e Parameter Average Rectified Output Current Surge Forwa rd Current *1 I Square d t *1 Operating J unctionTemperature R ange Storage Tem perature R ange Isoration Voltage Case mounting Mounting torqu e Terminals IO(AV) IFSM I2t Tjw Tstg Viso Ftor Conditi.

PT76SN16 : DIODE ■ CIRCUIT 75A Avg 1600 Volts ■ OUTLINE DRAWING PT76SN16 Dimension:[mm] ■ Maximum Ratings Parameter くりしピーク Repetitive Peak Reverse Voltage くりしピーク Non Repetitive Peak Reverse Voltage *1 *1 Symbol VRRM VRSM PT76SN16 1600 クラス Grade 1700 Unit V V Parameter Average Rectified Output Current サージ Surge Forward Current I Squared t *1 *1 Operating Junction Temperature Range Storage Temperature Range Isolation Voltage トルク Mounting Torque ベース Mounting Terminal Symbol Io (AV) IFSM I2t Tjw Tstg Viso F Conditions Tc=Tt=125℃ 3-Phase Full Wave, Rectified (Terminal) 50Hz ,1 サイクル,くりし Half Sine Wave, 1Pulse, Non-Repetitive 2~10ms -ベース,AC 1 Terminal to Base, AC 1m.

PT76SN8 : DIODE ■ CIRCUIT 75A Avg 800 Volts ■ OUTLINE DRAWING PT76SN8 Dimension:[mm] ■ Maximum Ratings Parameter くりしピーク Repetitive Peak Reverse Voltage くりしピーク Non Repetitive Peak Reverse Voltage *1 *1 Symbol VRRM VRSM PT76SN8 800 クラス Grade 900 Unit V V Parameter Average Rectified Output Current サージ Surge Forward Current I Squared t *1 *1 Operating Junction Temperature Range Storage Temperature Range Isolation Voltage トルク Mounting Torque ベース Mounting Terminal Symbol Io (AV) IFSM I2t Tjw Tstg Viso F Conditions Tc=Tt=125℃ 3-Phase Full Wave, Rectified (Terminal) 50Hz ,1 サイクル,くりし Half Sine Wave, 1Pulse, Non-Repetitive 2~10ms -ベース,AC 1 Terminal to Base, AC 1min. サ.




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