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BU408

Fairchild Semiconductor
Part Number BU408
Manufacturer Fairchild Semiconductor
Description NPN Epitaxial Silicon Transistor
Published Apr 17, 2005
Detailed Description BU406/406H/408 BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage 1 TO-220 2.Collector...
Datasheet PDF File BU408 PDF File

BU408
BU408

Overview
BU406/406H/408 BU406/406H/408 High Voltage Switching • Use In Horizontal Deflection Output Stage 1 TO-220 2.
Collector 3.
Emitter 1.
Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Value 400 200 6 7 10 4 60 150 - 55 ~ 150 Units V V V A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol ICES Parameter Collector Cut-off Current Test Condition VCE = 400V, VBE = 0 VCE = 250V, VBE = 0 VCE = 250V, VBE = 0 @ TC=150°C VBE = 6V, IC = 0 IC = 5A, IB = 0.
5A IC = 5A, IB = 0.
8A IC = 6A, IB = 1.
2A IC = 5A, IB = 0.
5A IC = 5A, IB = 0.
5A IC = 6A, IB = 1.
2A VCE = 10V, IC = 0.
5A IC = 5A, IB = 0.
5A IC = 5A, IB = 0.
8A IC = 6A, IB = 1.
2A 10 0.
75 0.
4 0.
4 Min.
Max.
5 100 1 1 1 1 1 1.
2 1.
2 1.
5 ...


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