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BUJ304A

NXP
Part Number BUJ304A
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ304A GENERAL DESCRIPTION High-volt...
Datasheet PDF File BUJ304A PDF File

BUJ304A
BUJ304A

Overview
Philips Semiconductors Product specification Silicon Diffused Power Transistor BUJ304A GENERAL DESCRIPTION High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control systems, etc.
QUICK REFERENCE DATA SYMBOL VCESM VCBO VCEO IC ICM Ptot VCEsat hFESAT tf PARAMETER Collector-emitter voltage peak value Collector-Base voltage (open emitter) Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Fall time (Inductive) CONDITIONS VBE = 0 V TYP.
0.
3 11 25 MAX.
1000 1000 500 6 10 100 1.
0 15 50 UNIT V V V A A W V ns Tmb ≤ 25 ˚C IC = 4.
0 A;IB = 0.
8 A IC = 4.
0 A; VCE = 5 V IC = 5.
0 A; IB1 = 1.
0 A PINNING - TO220AB PIN 1 2 3 tab base collector emitter collector DESCRIPTION PIN CONFIGURATION tab SYMBOL c b 1 23 e LIMITING VALU...


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