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UMT1N

Rohm
Part Number UMT1N
Manufacturer Rohm
Description DUAL TRANSISTOR
Published Apr 17, 2005
Detailed Description EMT1 / UMT1N / IMT1A General purpose transistor (dual transistors) Datasheet Parameter VCEO IC 　 Tr1 and Tr2 -50V -15...
Datasheet PDF File UMT1N PDF File

UMT1N
UMT1N

Overview
EMT1 / UMT1N / IMT1A General purpose transistor (dual transistors) Datasheet Parameter VCEO IC 　 Tr1 and Tr2 -50V -150mA 　 lFeatures 1)Two 2SA1037AK chips in a EMT, UMT or 　 SMT package.
2)Mounting possible with EMT3, UMT3 or 　 SMT3automatic mounting machines.
3)Transistor elements are independent, 　 eliminating interference.
4)Mounting cost and area can be cut in half.
lOutline EMT6 UMT6 　 SMT6 EMT1 SC-107C 　 　 　　 IMT1A SOT-457 　 　 　 　　　　　　　　 lInner circuit EMT1 / UMT1N UMT1N SOT-363 　 　 　 IMT1A lApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER lPackaging specifications Part No.
Package EMT1 UMT1N IMT1A EMT6 UMT6 SMT6 Package size 1616 2021 2928 　 　　　 Taping Reel size Tape width code (mm) (mm) T2R TN T110 　 180 180 180 　 8 8 8 　 Basic ordering unit.
(pcs) 8000 3000 3000 　 　　　 Marking T1 T1 T1 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　 　　 　 　 　 　 　 　 　 　 　 　 www.
rohm.
com © 2015 ROHM Co.
, Ltd.
All rights reserved.
1/8 20150515 - Rev.
003 EMT1 / UMT1N / IMT1A lAbsolute maximum ratings (Ta = 25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation EMT1/ UMT1N IMT1A Junction temperature Range of storage temperature Datasheet Symbol VCBO VCEO VEBO IC PD*1 *2 PD*1 *3 Tj Tstg Values -60 -50 -6 -150 150 300 150 -55 to +150 Unit V V V mA mW/Total mW/Total ℃ ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Collector-base breakdown voltage BVCBO IC = -50μA Collector-emitter breakdown voltage BVCEO IC = -1mA Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Collector-emitter saturation voltage DC current gain BVEBO ICBO IEBO VCE(sat) hFE IE = -50μA VCB = -60V VEB = -6V IC = -50mA, IB = -5mA VCE = -6V, IC = -1mA Transition frequency fT VCE = -12V, IE = 2mA, f = 100MHz Output capacitance Cob VCB = -12V, IE = 0A, f = 1MHz *1 ...


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