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W10

EIC discrete Semiconductors
Part Number W10
Manufacturer EIC discrete Semiconductors
Description SILICON BRIDGE RECTIFIERS
Published Apr 17, 2005
Detailed Description W005 - W10 PRV : 50 - 1000 Volts Io : 1.5 Ampere FEATURES : * * * * * * * Glass passivated chip High case dielectric str...
Datasheet PDF File W10 PDF File

W10
W10

Overview
W005 - W10 PRV : 50 - 1000 Volts Io : 1.
5 Ampere FEATURES : * * * * * * * Glass passivated chip High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for printed circuit board SILICON BRIDGE RECTIFIERS WOB 0.
39 (10.
0) 0.
31 (7.
87) 0.
22 (5.
59) 0.
18 (4.
57) + AC 1.
00 (25.
4) MIN.
1.
10 (27.
9) MIN.
0.
034 (0.
86) 0.
028 (0.
71) MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Terminals : Plated leads solderable per MIL-STD-202, Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 1.
29 grams Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
AC + AC 0.
22 (5.
59) 0.
18 (4.
57) 0.
22 (5.
59) 0.
18 (4.
57) Dimension in inches and (millimeter) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS RATING Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Current 0.
375" (9.
5 mm) lead length Peak Forward Surge Current Single half sine wave Superimposed on rated load (JEDEC Method) Rating for fusing ( t < 8.
3 ms.
) Ta = 25 °C Ta = 100 °C Maximum Forward Voltage per Diode at IF = 1.
0 Amp.
Maximum DC Reverse Current at Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) Operating Junction Temperature Range Storage Temperature Range SYMBOL W005 VRRM VRMS VDC IF(AV) I FSM It VF IR IR(H) CJ RθJA TJ T STG 2 W01 100 70 100 W02 200 140 200 W04 400 280 400 1.
5 50 10 1.
0 10 1.
0 14 36 W06 600 420 600 W08 800 560 800 W10 1000 700 1000 UNIT Volts Volts Volts Amps.
Amps.
A2S Volts µA mA pf °C/W °C °C 50 35 50 Typical Junction Capacitance per Diode (Note 1) - 50 to + 150 - 50 to + 150 Notes : 1 ) Measured at 1.
0 MHz and applied reverse voltage of 4.
0 Volts.
2 ) Thermal resistance from Junction to A...


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