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K170

Toshiba
Part Number K170
Manufacturer Toshiba
Description FET/ Silicon N Channel Junction Type(for Low Noise Audio Amplifier)
Published Apr 25, 2005
Detailed Description TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 2SK170 Low Noise Audio Amplifier Applications ...
Datasheet PDF File K170 PDF File

K170
K170

Overview
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK170 2SK170 Low Noise Audio Amplifier Applications Unit: mm • Recommended for first stages of EQ and M.
C.
head amplifiers.
• High |Yfs|: |Yfs| = 22 mS (typ.
) (VDS = 10 V, VGS = 0, IDSS = 3 mA) • High breakdown voltage: VGDS = −40 V • Low noise: En = 0.
95 nV/Hz1/2 (typ.
) (VDS = 10 V, ID = 1 mA, f = 1 kHz) • High input impedance: IGSS = −1 nA (max) (VGS = −30 V) Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating −40 10 400 125 −55~125 Unit V mA mW °C °C Electrical Characteristics (Ta = 25°C) JEDEC TC-92 JEITA SC-43 TOSHIBA 2-5F1D Weight: 0.
21 g (typ.
) Characteristics Symbol Test Condition Gate cut-off current Gate-drain breakdown voltage Drain current Gate-source cut-off voltage Forward transfer admittance Input capacitance Reverse transfer capacitance Noise figure IGSS VGS...


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