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LC421

Part Number	LC421
Manufacturer	Polyfet RF Devices
Description	SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR
Published	Apr 25, 2005
Detailed Description	polyfet rf devices LC421 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
Datasheet	LC421 PDF File

Overview

polyfet rf devices LC421 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR 25.
0 Watts Single Ended Package Style AC HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 120 Watts Junction to Case Thermal Resistance o 1.
30 C/W Maximum Junction Temperature o ...

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