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PDTC123JT

NXP
Part Number PDTC123JT
Manufacturer NXP
Description NPN resistor-equipped transistor
Published Mar 22, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123JT NPN resistor-equipped transistor Product specificat...
Datasheet PDF File PDTC123JT PDF File

PDTC123JT
PDTC123JT

Overview
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PDTC123JT NPN resistor-equipped transistor Product specification Supersedes data of 1998 May 08 1999 May 18 Philips Semiconductors Product specification NPN resistor-equipped transistor FEATURES • Built-in bias resistors R1 and R2 (typ.
2.
2 kΩ and 47 kΩ respectively) • Simplification of circuit design • Reduces number of components and board space.
k, 4 columns PDTC123JT 3 3 APPLICATIONS • Especially suitable for space reduction in interface and driver circuits • Inverter circuit configurations without use of external resistors.
DESCRIPTION NPN resistor-equipped transistor in a SOT23 plastic package.
1 Top view 2 MAM097 R1 1 R2 2 Fig.
1 Simplified outline (SOT23) and symbol.
MARKING TYPE NUMBER PDTC123JT Note 1.
∗ = p : Made in Hong Kong.
∗ = t : Made in Malaysia.
PINNING PIN 1 2 3 base/input emitter/ground collector/output Fig.
2 Equivalent inverter symbol.
DESCRIPTION 1 2 MGA893 - 1 MARKING CODE(1) ∗25 3 1999 May 18 2 Philips Semiconductors Product specification NPN resistor-equipped transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VCBO VCEO VEBO VI PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage input voltage positive negative IO ICM Ptot Tstg Tj Tamb Note 1.
Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS SYMBOL Rth j-a Note 1.
Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL ICBO ICEO IEBO hFE VCEsat Vi(off) Vi(on) R1 R2 ------R1 Cc PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain input-off voltage input-on voltage input resistor resistor ratio collector capacitance CONDITIONS IE = 0; VCB = 50 V IB = 0; VCE = 30 V IB = 0; VCE = 30 V; Tj = 150 °C IC = 0; VEB = 5 V IC = 10 mA; VCE = 5 V IC = 100 µA; VCE = 5 V IC = 5 mA; VCE = 0.
3 V MIN.
− − − − 100 − − 1.
1 1.
54 17 IE = ...


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