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LS833

Linear Integrated Systems
Part Number LS833
Manufacturer Linear Integrated Systems
Description ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET
Published Apr 25, 2005
Detailed Description LS830 LS831 LS832 LS833 Linear Integrated Systems FEATURES ULTRA LOW DRIFT ULTRA LOW LEAKAGE LOW NOISE LOW CAPACITANCE |...
Datasheet PDF File LS833 PDF File

LS833
LS833

Overview
LS830 LS831 LS832 LS833 Linear Integrated Systems FEATURES ULTRA LOW DRIFT ULTRA LOW LEAKAGE LOW NOISE LOW CAPACITANCE |∆VGS1-2 /∆T|= 5µV/°C max.
IG = 80fA TYP.
en= 70nV/√Hz TYP.
CISS= 3pf MAX.
ULTRA LOW LEAKAGE LOW DRIFT MONOLITHIC DUAL N-CHANNEL JFET ABSOLUTE MAXIMUM RATINGS NOTE 1 @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature Operating Junction Temperature -65° to +150°C +150°C D1 S1 G2 G1 3 5 S2 Maximum Voltage and Current for Each Transistor NOTE 1 Gate Voltage to Drain or Source 40V -VGSS -VDSO -IG(f) -IG Drain to Source Voltage Gate Forward Current Gate Reverse Current 40V 10mA 10µA D1 2 D2 6 D2 1 S1 7 G2 G1 S2 BOTTOM VIEW 22 X 20 MILS Maximum Power Dissipation Device Dissipation @ Free Air - Total 40mW @ +125°C LS833 75 25 0.
5 0.
5 1.
0 1.
0 UNITS µV/°C mV pA nA pA nA ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTICS LS830 LS831 LS832 5 10 20 |∆VGS1-2 /∆T| max.
Drift vs.
Temperature |VGS1-2| max.
-IG max -...


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