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NTE102

Part Number	NTE102
Manufacturer	NTE
Description	Germanium Complementary Transistors
Published	May 9, 2005
Detailed Description	NTE102 (PNP) & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and N...
Datasheet	NTE102 PDF File

Overview

NTE102 (PNP) & NTE103 (NPN) Germanium Complementary Transistors Power Output, Driver Description: The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications.
Features: D Low Collector–Emitter Saturation Voltage: VCE(sat) = 200mV Max @ IC = 24mA D High Emitter–Base Breakdown Voltage: V(BR)EBO = 12V Min @ IE = 20µA Absolute Maximum Ratings: Collector–Base Voltage, VCBO .
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25V Collector–Emitter Voltage, VCES .
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24V Emitter–Base Voltage, VEBO .
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12V Continuous Collector Current, IC .
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150mA Emitter Current, IE .
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100mA Total Device Dissipation (TA = +25°C), PD .
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150mW Derate Above +25° .
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2mW/°C Total Device Dissipation (TC = +25°C), PD .
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300mW Derate Above +25° .
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4mW/°C Operating Junction Temperature Range, TJ .
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–65° to +100°C Storage Junction Temperature Range, Tstg .
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–65° to +100°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter OFF Ch...

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