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NTE14

NTE
Part Number NTE14
Manufacturer NTE
Description Silicon PNP Transistor
Published May 9, 2005
Detailed Description NTE14 Silicon PNP Transistor High Power, Low Frequency Driver Features: D High Power Compact FTR Package: PC = 750mW D H...
Datasheet PDF File NTE14 PDF File

NTE14
NTE14

Overview
NTE14 Silicon PNP Transistor High Power, Low Frequency Driver Features: D High Power Compact FTR Package: PC = 750mW D High Breakdown Voltage: VCEO = 80V Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO .
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80V Collector–Emitter Voltage, VCEO .
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80V Emitter–Base Voltage, VEBO .
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5V Collector Current, IC .
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700mA Collector Dissipation, PC .
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750mW Junction Temperature, TJ .
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+135°C Storage Temperature Range, Tstg .
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–55° to +135°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector–Emitter Breakdown Voltage Collector–Base Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector Saturation Voltage Transition Frequency Output Capacitance Symbol Test Conditions Min 80 80 5 – – 120 – – – Typ Max Unit – – – – – – 0.
2 100 14 – – – 0.
5 0.
5 270 0.
4 – 20 V V V µA µA – V MHz pF V(BR)CEO IC = 2mA V(BR)CBO IC = 50µA V(BR)EBO IE = 50µA ICBO IEBO hFE fT Cob VCB = 50V VEB = 4V VCE = 3V, IC = 100mA VCE = 10V, IE = 50mA VCB = 10V, IE = 0, f = 1MHz VCE(sat) IC = 500mA, IB = 50mA .
102 (2.
6) .
280 (7.
11) E C B .
185 (4.
7) .
100 (2.
54) .
051 (1.
29) .
138 (3.
5) .
022 (0.
55) ...


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