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NTE16

NTE
Part Number NTE16
Manufacturer NTE
Description Silicon Complementary Transistors Low Noise / General Purpose Amplifier
Published May 9, 2005
Detailed Description NTE16 (NPN) & NTE17 (PNP) Silicon Complementary Transistors Low Noise, General Purpose Amplifier Features: D Low Collect...
Datasheet PDF File NTE16 PDF File

NTE16
NTE16

Overview
NTE16 (NPN) & NTE17 (PNP) Silicon Complementary Transistors Low Noise, General Purpose Amplifier Features: D Low Collector Saturation Voltage D Low Output Capacitance D Low Noise Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO .
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50V Collector–Emitter Voltage, VCEO .
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40V Emitter–Base Voltage, VEBO .
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5V Collector Current, IC .
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100mA Collector Dissipation, PC .
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300mW Operating Junction Temperature, TJ .
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+125°C Storage Temperature Range, Tstg .
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–55° to +125°C Electrical Charactristics: (TA = +25°C unless otherwise specified) Parameter Collector–Emitter Breakdown Voltage Collector–Base Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector–Emitter Saturation Voltage NTE16 NTE17 Transition Frequency NTE16 NTE17 Output Capacitance NTE16 NTE17 Cob VCB = 12V, IE = 0, f = 1MHz fT VCE = 12V, IE = 2mA Symbol Test Conditions Min 40 50 5 – – 270 – – – – – – Typ – – – – – – – 0.
1 180 140 2.
0 4.
0 Max – – – 0.
5 0.
5 560 0.
4 0.
5 – – 3.
5 5.
0 V V MHz MHz pF pF Unit V V V µA µA V(BR)CEO IC = 1mA V(BR)CBO IC = 50µA V(BR)EBO IE = 50µA ICBO IEBO hFE VCE(sat) VCB = 30V VEB = 4V VCE = 6V, IC = 1mA IC = 50mA, IB = 5mA .
102 (2.
6) .
280 (7.
11) .
185 (4.
7) E C B ...


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