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NTE160

NTE
Part Number NTE160
Manufacturer NTE
Description Germanium PNP Transistor RF-IF Amp / FM Mixer OSC
Published May 9, 2005
Detailed Description NTE160 Germanium PNP Transistor RF–IF Amp, FM Mixer OSC Description: The NTE160 is a germanium mesa PNP transistor in a ...
Datasheet PDF File NTE160 PDF File

NTE160
NTE160


Overview
NTE160 Germanium PNP Transistor RF–IF Amp, FM Mixer OSC Description: The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a preamplifier mixer and oscillator up to 900MHz.
Absolute Maximum Ratings: Collector–Emitter Voltage (VBE = 0), VCES .
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20V Collector–Emitter Voltage, (IB = 0), VCEO .
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16V Emitter–Base Voltage (IC = 0), VEBO .
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3V Collector Current, IC .
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10mA Total Power Dissipation (TA = +45°C), Ptot .
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60mW Operating Junction Temperature, TJ .
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+90°C Storage Temperature Range, Tstg .
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–30° to +75°C Thermal Resistance, Junction–to–Case, RthJC .
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400°C/W max Thermal Resistance, Junction–to–Ambient, RthJA .
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750°C/W max Electrical Characteristics: (TC = +25°C unless otherwise specified) Parameter Collector Cutoff Current Emitter Cutoff Current Base–Emitter Voltage DC Current Gain Transition Frequency Reverse Capacitance Noise Figure Power Gain Symbol ICES ICEO IEBO VBE hFE fT –Cre NF Gpb Test Conditions VCE = –20V, VBE = 0 VCE = –15V, IB = 0 VEB = –0.
3V, IC = 0 IC = –2mA, VCE = –10V IC = –5mA, VCE = –5V IC = –2mA, VCE = –10V IC = –5mA, VCE = –5V IC = –2mA, VCE = –10V, f = 100MHz IC = –2mA, VCE = –10V, f = 450kHz IC = –2mA, VCE = –10V, Rg = 60Ω, f = 800MHz IC = –2mA, VCE =...


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