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NTE18

NTE
Part Number NTE18
Manufacturer NTE
Description Silicon Complementary Transistors
Published May 9, 2005
Detailed Description NTE18 (NPN) & NTE19 (PNP) Silicon Complementary Transistors High Voltage, High Current Capacity Driver Applications: D D...
Datasheet PDF File NTE18 PDF File

NTE18
NTE18

Overview
NTE18 (NPN) & NTE19 (PNP) Silicon Complementary Transistors High Voltage, High Current Capacity Driver Applications: D Drivers for Amplifiers of up to PO = 60W Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO .
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80V Collector–Emitter Voltage, VCEO .
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80V Emitter–Base Voltage, VEBO .
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5V Collector Current, IC Continuous .
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700mA Pulse (Note 1) .
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1A Collector Dissipation, PC .
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1W Junction Temperature, TJ .
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+135°C Storage Temperature Range, Tstg .
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–55° to +135°C Note 1.
PW = 20ms, Duty Cycle = 1/2 Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector–Emitter Breakdown Voltage Collector–Base Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector Saturation Voltage Transition Frequency NTE18 NTE19 Output Capacitance NTE18 NTE19 Cob VCB = 10V, IE = 0, f = 1MHz Symbol Test Conditions Min 80 80 5 – – 120 – – – – – Typ – – – – – – 200 120 100 10 14 Max – – – 0.
5 0.
5 270 400 – – – 20 mV MHz MHz pF pF Unit V V V µA µA V(BR)CEO IC = 2mA V(BR)CBO IC = 50µA V(BR)EBO...


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