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NTE190

Part Number	NTE190
Manufacturer	NTE
Description	Silicon NPN Transistor High Voltage Amplifier
Published	May 9, 2005
Detailed Description	NTE190 Silicon NPN Transistor High Voltage Amplifier Description: The NTE190 is an NPN silicon transistor in a TO202N ty...
Datasheet	NTE190 PDF File

Overview

NTE190 Silicon NPN Transistor High Voltage Amplifier Description: The NTE190 is an NPN silicon transistor in a TO202N type case designed for horizontal drive applications, high voltage linear amplifiers, and high voltage transistor regulators.
Features: D High Collector–Emitter Breakdown Voltage: V(BR)CEO = 180V (Min) @ IC = 1mA D Low Collector–Emitter Saturation Voltatge: VCE(sat) = 0.
5V (Max) @ IC = 200mA D High Power Dissipation: PD = 10W @ TC = +25°C Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO .
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180V Collector–Base Voltage, VCB .
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180V Emitter–Base Voltage, VEB .
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5V Collector Current, IC .
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1A Total Device Dissipation (TA = +25°C), PD .
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1W Derate Above 25°C .
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8mW/°C Total Device Dissipation (TC = +25°C), PD .
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10W Derate Above 25°C .
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80mW/°C Operating Junction Temperature Range, TJ .
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–55° to +150°C Storage Temperature Range, Tstg .
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–55° to +150°C Lead Temperature (During Soldering, 1/16” from case for 10sec), TL .
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+260°C Thermal Resistance, ...

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