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NTE20

Part Number	NTE20
Manufacturer	NTE
Description	Silicon Complementary Transistors High Power / Low Collector Saturation Voltage Power Output
Published	May 9, 2005
Detailed Description	NTE20 (NPN) & NTE21 (PNP) Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output Fe...
Datasheet	NTE20 PDF File

Overview

NTE20 (NPN) & NTE21 (PNP) Silicon Complementary Transistors High Power, Low Collector Saturation Voltage Power Output Features: D High Power in a Compact ATR Package: PO = 1W Applications: D Regulated Power Supplies D 1 to 2W Output Stages D Drivers Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO .
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40V Collector–Emitter Voltage, VCEO .
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32V Emitter–Base Voltage, VEBO .
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5V Collector Current, IC Continuous .
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2A Pulse NTE20 .
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2.
5A NTE21 .
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3.
0A Collector Dissipation, PC .
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1W Junction Temperature, TJ .
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+135°C Storage Temperature Range, Tstg .
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–55° to +135°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Collector–Emitter Breakdown Voltage Collector–Base Breakdown Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Collector Saturation Voltage Transition Frequency Output Capacitance Symbol Test Conditions Min 32 40 5 – – 120 – – – Typ...

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