DatasheetsPDF.com

NTE311

NTE
Part Number NTE311
Manufacturer NTE
Description Silicon NPN Transistor
Published May 9, 2005
Detailed Description NTE311 Silicon NPN Transistor Frequency Multiplier, Driver, VHF/UHF Absolute Maximum Ratings: Collector–Emitter Voltage,...
Datasheet PDF File NTE311 PDF File

NTE311
NTE311

Overview
NTE311 Silicon NPN Transistor Frequency Multiplier, Driver, VHF/UHF Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
30V Collectore–Base Voltage, VCBO .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
55V Emitter–Base Voltage, VEBO .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
3.
5V Continuous Collector Current, IC .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
400mA Total Device Dissipation (TC = +25°C), PD .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
5W Derate Above 25°C .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
28.
6mW/°C Storage Temperature Range, Tstg .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
–65° to +200°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter OFF Characteristics Collector–Emitter Breakdown Voltage Collector–Emitter Sustaining Voltage Emitter–Base Breakdown Voltage Collector Cutoff Current VCER(sus) IC = 5mA, RBE = 10Ω VCEO(sus) IC = 5mA, IB = 0 V(BR)EBO ICEO ICEX Emitter Cutoff Current ON Characteristics DC Current Gain Collector–Emitter Saturation Voltage Small–Signal Characteristics Current–Gain Bandwidth Product Output Capacitance Functional Test Amplifier Power Gain Collector Efficiency Gpe h VCC = 28V, POUT = 1W, f = 400MHz VCC = 20V, POUT = 1W, f = 400MHz 10 45 – – – – dB % fT Cobo IC = 50mA, VCE = 15V, f = 200MHz VCB = 28V, IE = 0, f = 1MHz 800 – – – – 3.
0 MHz pF hFE VCE(sat) IC = 50mA, VCE = 5V IC = 100mA, IB = 20mAQ 25 – – – 200 1.
0 – V IEBO IF = 100µA, IC = 0 VCE = 28V, IB = 0 VCE = 30V, VBE = –1.
5V, TC = +200°C VCE = 55V, VBE = –1.
5V VBE = 3.
5V, IC = 0 55 30 3.
5 –– – – – – – –...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)