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NTE490

NTE
Part Number NTE490
Manufacturer NTE
Description MOSFET
Published May 9, 2005
Detailed Description NTE490 MOSFET N–Ch, Enhancement Mode High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . ...
Datasheet PDF File NTE490 PDF File

NTE490
NTE490

Overview
NTE490 MOSFET N–Ch, Enhancement Mode High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS .
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60V Gate–Source Voltage, VGS .
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±20V Drain Current (Note 1), ID .
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500mA Total Device Dissipation (TA = +25°C), PD .
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350mW Operating Junction Temperature Range, TJ .
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–55° to +150°C Storage Temperature Range, Tstg .
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–55° to +150°C Note 1.
The Power Dissipation of the package may result in a lower continuous drain current.
Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter OFF Characteristics Drain–Source Breakdown Voltage Gate Reverse Current ON Characteristics (Note 2) Gate Threshold Voltage Static Drain–Source ON Resistance Drain Cutoff Current Forward Transconductance Small–Signal Characteristics Input Capacitance Switching Characteristics Turn–On Time Turn–Off Time ton toff ID = 200mA ID = 200mA – – 4 4 10 10 ns ns Ciss VDS = 10V, VGS = 0, f = 1MHz – – 60 pF VGS(Th) rDS(on) ID(off) gfs VDS = VGS, ID = 1mA VGS = 10V, ID = 200mA VDS = 25V, VGS = 0 VDS = 10V, ID = 250mA 0.
8 – – – 2.
0 1.
8 – 200 3.
0 5.
0 0.
5 – V V(BR)DSS VGS = 0, ID = 100µA IGSS VGS = 15V, VDS = 0 60 – 90 0.
01 – 10 V nA Symbol Test Conditions Min Typ Max Unit Ω µA mmhos Note 2.
Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2%.
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135 (3.
45) Min .
210 (5.
33) Max Seating Plane .
500 (12.
7) Min .
021 (.
445) Dia Max D G S .
100 (2.
54) .
050 (1.
27) .
165 (4.
2) Max .
105 (2.
67) Max .
105 (2.
67) Max .
205 (5.
2) Max ...


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