DatasheetsPDF.com

NTE491

NTE
Part Number NTE491
Manufacturer NTE
Description MOSFET
Published May 9, 2005
Detailed Description NTE491 MOSFET N–Ch, Enhancement Mode High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . ....
Datasheet PDF File NTE491 PDF File

NTE491
NTE491

Overview
NTE491 MOSFET N–Ch, Enhancement Mode High Speed Switch Absolute Maximum Ratings: Drain–Source Voltage, VDS .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
60V Drain–Gate Voltage (RGS = 1MΩ), VDGR .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
60V Gate–Source Voltage, VGS .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
±40V Drain Current, ID Continuous .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
200mA Pulsed .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
500mA Total Device Dissipation (TA = +25°C), PD .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
350mW Derate above 25°C .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
2.
8mW/°C Operating Junction Temperature Range, TJ .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
–55° to +150°C Storage Temperature Range, Tstg .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
–55° to +150°C Thermal Resistance, Junction–to–Ambient, Rth (JA) .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
312.
5°C/W Maximum Lead Temperature (During Soldering, 1/16” from case, 10sec), TL .
.
.
.
.
.
.
.
.
.
.
.
+300°C Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter OFF Characteristics Zero–Gate–Voltage Drain Current IDSS V(BR)DSS IGSSF VGS(Th) rDS(on) VDS(on) Id(on) gfs VDS = 48V, VGS = 0 VDS = 48V, VGS = 0, TJ = +125°C Drain–Source Breakdown Voltage Gate–Body Leakage Current, Forward ON Characteristics (Note 1) Gate Threshold Voltage Static Drain–Source ON Resistance ID = 1mA, VDS = VGS VGS = 10V, ID = 500mA VGS = 4.
5V, ID =...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)