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PN168

Panasonic Semiconductor
Part Number PN168
Manufacturer Panasonic Semiconductor
Description Silicon NPN Phototransistor
Published May 9, 2005
Detailed Description Phototransistors PNA1801L (PN168) Silicon NPN Phototransistor Unit : mm Not soldered 2.0 max. For optical control syst...
Datasheet PDF File PN168 PDF File

PN168
PN168

Overview
Phototransistors PNA1801L (PN168) Silicon NPN Phototransistor Unit : mm Not soldered 2.
0 max.
For optical control systems Features High sensitivity Wide spectral sensitivity, suited for detecting GaAs LEDs Small size, high output power, low cost ø 3 plastic package 15.
0±1.
0 4.
5±0.
3 ø3.
8±0.
2 ø3.
0±0.
2 5.
0±0.
2 0.
6 2-0.
8 max.
2-0.
5±0.
1 2 0.
5±0.
1 1.
0 (1.
5) 1 2.
54 Absolute Maximum Ratings (Ta = 25˚C) Parameter Collector to emitter voltage Emitter to collector voltage Collector current Collector power dissipation Operating ambient temperature Storage temperature Symbol VCEO VECO IC PC Topr Tstg Ratings 30 5 20 100 –25 to +85 –30 to +100 Unit V V mA mW ˚C ˚C 1.
7 1: Emitter 2: Collector Electro-Optical Characteristics (Ta = 25˚C) Parameter Dark current Collector photo current Peak sensitivity wavelength Acceptance half angle Response time Collector saturation voltage *1 Symbol ICEO ICE(L) λP θ tr, tf*2 VCE(sat) VCE = 10V Conditions VCE = 10V, L = 500 VCE = 10V Measured from the op...


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