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NTE6086

NTE Electronics
Part Number NTE6086
Manufacturer NTE Electronics
Description Silicon Dual Schottky Rectifier
Published May 12, 2005
Detailed Description NTE6086 Silicon Dual Schottky Rectifier Description: The NTE6086 is a silicon dual power rectifier in a TO220 type packa...
Datasheet PDF File NTE6086 PDF File

NTE6086
NTE6086

Overview
NTE6086 Silicon Dual Schottky Rectifier Description: The NTE6086 is a silicon dual power rectifier in a TO220 type package designed using the Schottky Barrier principle with a platinum barrier metal.
Features: D 20 Amps Total (10 Amps Pre Diode Leg) D Guarding for Stress Protection D Low Forward Voltage D +150°C Operating Junction Temperature D Guaranteed Reverse Avalanche Absolute Maximum Ratings (Per Diode Leg): Peak Repetitive Reverse Voltage, VRRM .
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100V Working Peak Reverse Voltage, VRWM .
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100V DC Blocking Voltage, VR .
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100V Average Rectified Forward Current (VR = 100V, TC = +133°C), IF(AV) .
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10A Peak Repetitive Forward Current (VR = 100V, Square Wave, 20kHz, TC = +133°C), IFRM .
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20A Non–Repetitive Peak Surge Current, IFSM (Surge Applied at Rated Load Conditions, Halfwave, Single Phase, 60Hz) .
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150A Peak Repetitive Reverse Current (2µs, 1kHz), IRRM .
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5A Operating Junction Temperature Range, TJ .
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–65° to +150°C Storage Temperature Range, Tstg .
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–65° to +175°C Voltage Rate of Change (VR = 100V), dv/dt .
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1000V/µs Thermal Resistance, Junction–to–Case, RthJC .
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2°C/W Thermal Resistance, Junction–to–Ambient, RthJA .
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60°C/W Electrical Characteristics (Per Diode Leg): (Note 1) Pa...


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