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NTE66

NTE Electronics
Part Number NTE66
Manufacturer NTE Electronics
Description MOSFET N-Ch / Enhancement Mode High Speed Switch
Published May 12, 2005
Detailed Description NTE66 MOSFET N–Ch, Enhancement Mode High Speed Switch Description: The NTE66 is a TMOS Power FET in a TO220 type package...
Datasheet PDF File NTE66 PDF File

NTE66
NTE66

Overview
NTE66 MOSFET N–Ch, Enhancement Mode High Speed Switch Description: The NTE66 is a TMOS Power FET in a TO220 type package designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
Features: D Lower RDS(ON) D Improved Inductive Ruggedness D Fast Switching Times D Lower Input Capacitance D Extended Safe Operating Area D Improved High Temperature Reliability Absolute Maximum Ratings: Drain–Source Voltage (TJ = +25°C to +150°C), VDSS .
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100V Drain–Gate Voltage (RGS = 1MΩ, TJ = +25°C to +125°C), VDGR .
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100V Gate–Source Voltage, VGS .
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±20V Continuous Drain Current, ID TC = +25°C .
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14A TC = +100°C .
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10A Pulsed Drain Current (Note 2), IDM .
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56A Pulsed Gate Current, IGM .
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±1.
5A Single Pulsed Avalanche Energy (Note 3), EAS .
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69mJ Avalanche Current, IAS .
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14A Total Power Dissipation (TC = +25°C), PD .
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77W Derate Above 25°C .
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0.
62W/°C ...


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