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NTE71

NTE Electronics
Part Number NTE71
Manufacturer NTE Electronics
Description Silicon NPN Transistor High Current Amp / Fast Switch
Published May 12, 2005
Detailed Description NTE71 Silicon NPN Transistor High Current Amp, Fast Switch Description: The NTE71 is silicon NPN transistor in a TO63 st...
Datasheet PDF File NTE71 PDF File

NTE71
NTE71

Overview
NTE71 Silicon NPN Transistor High Current Amp, Fast Switch Description: The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that provides surface stabilization for high voltage operation and enhances long term reliability.
Absolute Maximum Ratings: Collector–Base Voltage, VCBO .
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150V Collector–Emitter Voltage, VCEO .
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150V Emitter–Base VOltage, VEBO .
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10V Continuous Collector Current, IC .
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20A Continuous Base Current, IB .
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4.
5A Total Power Dissipation (TC = +25°C), PD .
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200W Storage Temperature Range, Tstg .
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–65° to +200°C Electrical Characteristics: (TC = +25°C unless otherwise spcified) Parameter OFF Characteristics Collector–Emitter Sustaining Voltage Emitte Cutoff Current Collector Cutoff Current V(BR)CEO(sus) IC = 100mA IEBO ICEX VEB = 10V VCE = 150V, VBE = –1.
5V VCE = 150V, VBE = –1.
5V, TC = +150°C ON Characteristics (Note 1) DC Current Gain Collector Saturation Voltage Base–Emitter Voltage hFE VCE(sat) VBE VCE = 3V, IC = 10A IC = 10A, IB = 1.
5A IC = 10A, IB = 1.
5A 10 – – – – – 50 1.
5 2.
5 V V 150 – – – – – – – – 250 2 20 V µA mA mA Symbol Test Conditions Min Typ Max Unit Note 1.
Pulse test: Pulse Width = 300µs, Duy Cycle ≤ 2%.
Electrical Characteristics (Cont’d): (TC = +25°C unless otherwise spcified) Parameter Dynamic Characteristics ...


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