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OP299

ETC
Part Number OP299
Manufacturer ETC
Description GaAlAs Plastic Infrared Emitting Diode
Published May 13, 2005
Detailed Description Product Bulletin OP294 June 1996 GaAlAs Plastic Infrared Emitting Diode Types OP294, OP299 Features • Characterized at...
Datasheet PDF File OP299 PDF File

OP299
OP299

Overview
Product Bulletin OP294 June 1996 GaAlAs Plastic Infrared Emitting Diode Types OP294, OP299 Features • Characterized at 5mA for battery operated systems or other low drive current systems • Wide irradiance pattern (OP294) or narrow irradiance pattern (OP299) • Significantly higher power output than GaAs at equivalent drive currents • Wavelength matched to silicon’ s peak response • T-1 3/4 package Absolute Maximum Ratings (TA = 25o C unless otherwise noted) Reverse Voltage .
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5.
0 V Continuous Forward Current .
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100 mA Peak Forward Current .
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750 mA Storage and Operating Temperature Range .
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-40o C to +100o C Lead Soldering Temperature [1/16 inch (1.
6 mm) from case for 5 sec.
with soldering iron] .
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260o C(1) Power Dissipation .
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180 mW(2) Notes: (1) RMA flux is recommended.
Duration can be extended to 10 sec.
max.
when flow soldering.
A max.
of 20 grams force may be applied to the leads when soldering.
(2) Derate linearly 1.
80 mW/o C above 25o C.
(3) Ee(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.
250" (6.
35 mm) in diameter, perpendicular to and centered on the mechanical axis of the lens, and 1.
429" (36.
3 mm) from the measurement surface.
Ee(APT) is not necessarily uniform within the measured area.
(4) Ee(APT) is a measurement of the average apertured radiant energy incident upon a sensing area 0.
250" (6.
35 mm) in diameter, perpendicular to and centered on the mechanical axis of the lens, and .
500" (12.
7 mm) from the measurement surface.
Ee(APT) i...


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