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2N2643


Part Number 2N2643
Manufacturer Motorola
Title DUAL AMPLIFIER TRANSISTORS
Description ...
Features ...

File Size 148.08KB
Datasheet 2N2643 PDF File








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2N2640 : .

2N2640DCSM : 2.54 ± 0.13 (0.10 ± 0.005) 0.64 ± 0.06 (0.025 ± 0.003) 4.32 ± 0.13 (0.170 ± 0.005) 2N2640DCSM Dimensions in mm (inches). 2.29 ± 0.20 (0.09 ± 0.008) 1.65 ± 0.13 (0.065 ± 0.005) 1.40 ± 0.15 (0.055 ± 0.006) Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability Applications 23 1 A 6 4 5 0.23 rad. (0.009) 6.22 ± 0.13 (0.245 ± 0.005) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Pin 4 – Collector 2 Pin 5 – Emitter 2 Pin 6 – Emitter 1 Dual Bipolar NPN Devices. VCEO = 45V IC = 0.03A All Semelab hermetically sealed products can be processed in accordance with the requirements .

2N2641 : .

2N2642 : .

2N2644 : OEM: Texas Instruments 2N2644 Data Sheet www.semicon-data.com OEM: Texas Instruments 2N2644 Data Sheet www.semicon-data.com OEM: Texas Instruments 2N2644 Data Sheet www.semicon-data.com .

2N2644 : .

2N2646 : Boca Semiconductor Corp. (BSC) http://www.bocasemi.com http://www.bocasemi.com .

2N2646 : .

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2N2646 : The CENTRAL SEMICONDUCTOR 2N2646 and 2N2647 devices are silicon PN Unijunction Transistors designed for general purpose industrial applications. MARKING: FULL PART NUMBER TO-18 (UJT) CASE MAXIMUM RATINGS: (TA=25°C) Emitter Reverse Voltage SYMBOL VB2E Interbase Voltage VB2B1 RMS Emitter Current Ie Peak Emitter Current (Duty Cycle ≤1%, PRR≤10pps) ie RMS Power Dissipation PD Operating and Storage Junction Temperature TJ, Tstg 30 35 50 2.0 300 -65 to +150 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) 2N2646 SYMBOL TEST CONDITIONS MIN MAX VB2B1=10V 0.56 0.75 RBB VB2B1=3.0V 4.7 9.1 IEB2O VB2E=30V - 12 IV VB2B1=20V, RB2=100Ω 4.0 - IP VB2B1=25V - 5.0 VOB1.

2N2646 : 2N2646 2N2647 SILICON UNIJONCTION TRANSISTORS Silicon Planar Unijunction Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as well as a much higher base-one peak pulse voltage. In addition, these www.DataSheet4U.com devices are much faster switches. The 2N2646 is intended for general purpose industrial applications where circuit economy is of primary importance, and is ideal for use in firing circuits for Silicon Controlled Rectifiers and other applications where a guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where a low emitter leakage current and a low peak point emitter current (trigger cur.

2N2646 : The 2N2646 is designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuits. Features: D Low Peak Point Current: 5A (Max) D Low Emitter Reverse Current: .005A (Typ) D Passivated Surface for Reliability & Uniformity Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Power Dissipation (Note 1), PD 300mW RMS Emitter Current, IE(RMS) 50mA Peak Pulse Emitter Current (Note 2), iE .

2N2646 : .

2N2646 : Transistor Unijunction, TO-18 Absolute Maximum Ratings: Tj=125°C unless otherwise noted Symbol Ratings VB2E Ie ie VB2B1 PD TJ TStg Emitter-Base2 Voltage RMS Emitter Current Peak Pulse Emitter Current Interbase Voltage RMS power Dissipation Junction Temperature Storage Temperature Pin Configurations 1. Emitter 2. Base 1 3. Base 2 Value 30 50 2 35 300 -65 to +125 -65 to +150 Unit V mA A V mW °C °C Electrical Characteristics: TC=25°C unless otherwise noted Symbol Ratings η RBBO VEB1(sat) IB2(MOD) IEO V(BR)B1E IV IP Intrinsic stand-off ratio, VB2B1 = 10V Interbase Resistance, VB2B1 = 3V Emitter Saturation Voltage VB2B1 = 10V, IE = 50 mA Modulated Interbase Current VB2B1 = 10V, IE = .

2N2646 : 2N2646, 2N2647 High-reliability discrete products and engineering services since 1977 SILICON UNIJUNCTION TRANSISTOR FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix. MAXIMUM RATINGS Rating Symbol Value Unit Power dissipation(1) PD 300 mW RMS emitter current IE(EMS) 50 mA Peak pulse emitter current (2) IE 2 Amps Emitter reverse voltage VB2E 30 Volts Interbase voltage VB2B1 35 Volts Operating junction temperature range TJ -65 to 125 °C Storage temperature range Tstg -65 to 150 °C Note 1: Derate 3mW/°C in.




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