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74HC162 Datasheet PDF

Philips
Part Number 74HC162
Manufacturer Philips
Title Presettable synchronous BCD decade counter
Description The 74HC/HCT162 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance w...
Features
• Synchronous counting and loading
• Two count enable inputs for n-bit cascading
• Positive-edge triggered clock
• Synchronous reset
• Output capability: standard
• ICC category: MSI GENERAL DESCRIPTION The 74HC/HCT162 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottk...

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74HC00 : The 74HC00 provides provides four independent 2-input NAND gates with standard push-pull outputs. The device is designed for operation with a power supply range of 2.0V to 6.0V. The gates perform the Boolean function: Pin Assignments Y = A • B or Y = A + B Features • Wide Supply Voltage Range from 2.0V to 6.0V • Sinks or Sources 4mA at VCC = 4.5V • CMOS Low Power Consumption • Schmitt Trigger Action at All Inputs • ESD Protection Exceeds JESD 22 ƒ 200-V Machine Model (A115-A) ƒ 2000-V Human Body Model (A114-A) ƒ Exceeds 1000-V Charged Device Model (C101C) • Range of Package Options SO-14 and TSSOP-14 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gr.

74HC00 : The 74HC00; 74HCT00 is a quad 2-input NAND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. 2. Features and benefits  Input levels:  For 74HC00: CMOS level  For 74HCT00: TTL level  Complies with JEDEC standard no. 7A  ESD protection:  HBM JESD22-A114F exceeds 2000 V  MM JESD22-A115-A exceeds 200 V  Multiple package options  Specified from 40 C to +85 C and from 40 C to +125 C 3. Ordering information Table 1. Ordering information Type number Package Temperature range 74HC00D 40 C to +125 C 74HCT00D 74HC00DB 40 C to +125 C 74HCT00DB 74HC00PW 40 C to +125 C 74HCT00PW 74HC0.

74HC00 : The 74HC00; 74HCT00 is a quad 2-input NAND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. 2. Features and benefits • Wide supply voltage range from 2.0 to 6.0 V • CMOS low power dissipation • High noise immunity • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B • Input levels: • For 74HC00: CMOS level • For 74HCT00: TTL level • Complies with JEDEC standards: • JESD8C (2.7 V to 3.6 V) • JESD7A (2.0 V to 6.0 V) • ESD protection: • HBM JESD22-A114F exceeds 2000 V • MM JESD22-A115-A exceeds 200 V • Multiple package options • Specified from -40 °C to +85 °C and from -40 °C to +125 °C 3. Ord.

74HC00-Q100 : The 74HC00-Q100; 74HCT00-Q100 is a quad 2-input NAND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications. 2. Features and benefits • Automotive product qualification in accordance with AEC-Q100 (Grade 1) • Specified from -40 °C to +85 °C and from -40 °C to +125 °C • Wide supply voltage range from 2.0 to 6.0 V • CMOS low power dissipation • High noise immunity • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B • Input levels: • For 74HC00-Q100: .

74HC00D : • Quad 2-Input NAND Gate 2. General The 74HC00D is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages including buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. 3. Features (1) High speed: tpd = 6 ns (typ.) at VCC = 5 V (2) Low power dissipation: ICC = 1.0 µA (max) Ta = 25  (3) Balanced propagation delays: tPLH ≈ tPHL (4) Wide operating voltage range: VCC(opr) = 2.0 to 6.0 V 4. Pack.

74HC00S14 : The 74HC00 provides provides four independent 2-input NAND gates with standard push-pull outputs. The device is designed for operation with a power supply range of 2.0V to 6.0V. The gates perform the Boolean function: Pin Assignments Y = A • B or Y = A + B Features • Wide Supply Voltage Range from 2.0V to 6.0V • Sinks or Sources 4mA at VCC = 4.5V • CMOS Low Power Consumption • Schmitt Trigger Action at All Inputs • ESD Protection Exceeds JESD 22 ƒ 200-V Machine Model (A115-A) ƒ 2000-V Human Body Model (A114-A) ƒ Exceeds 1000-V Charged Device Model (C101C) • Range of Package Options SO-14 and TSSOP-14 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gr.

74HC00T14 : The 74HC00 provides provides four independent 2-input NAND gates with standard push-pull outputs. The device is designed for operation with a power supply range of 2.0V to 6.0V. The gates perform the Boolean function: Pin Assignments Y = A • B or Y = A + B Features • Wide Supply Voltage Range from 2.0V to 6.0V • Sinks or Sources 4mA at VCC = 4.5V • CMOS Low Power Consumption • Schmitt Trigger Action at All Inputs • ESD Protection Exceeds JESD 22 ƒ 200-V Machine Model (A115-A) ƒ 2000-V Human Body Model (A114-A) ƒ Exceeds 1000-V Charged Device Model (C101C) • Range of Package Options SO-14 and TSSOP-14 • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Antimony Free. “Gr.

74HC01 : HD74HC01 Quad. 2-input NAND Gates (with open drain outputs) Features • • • • • High Speed Operation: tpd = 9 ns typ (CL = 50 pF) High Output Current: Fanout of 10 LSTTL Loads Wide Operating Voltage: VCC = 2 to 6 V Low Input Current: 1 µA max Low Quiescent Supply Current: ICC (static) = 1 µA max (Ta = 25°C) Pin Arrangement 1Y 1A 1B 2Y 2A 2B GND 1 2 3 4 5 6 7 (Top view) 14 VCC 13 4Y 12 4B 11 4A 10 3Y 9 8 3B 3A HD74HC01 DC Characteristics Ta = 25°C Item Input voltage Symbol VIH Ta = –40 to +85°C Max — — — 0.5 1.35 1.8 0.1 0.1 0.1 0.33 0.33 ±5.0 ±1.0 10 µA µA µA I OL = 4 mA I OL = 5.2 mA Vin = VIH or VIL, Vout = VCC or GND Vin = VCC or GND Vin = VCC or GND, Iout = 0 µA V Vin = VIH or VIL I.

74HC02 : The 74HC02; 74HCT02 is a quad 2-input NOR gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. 2. Features and benefits  Input levels:  For 74HC02: CMOS level  For 74HCT02: TTL level  Complies with JEDEC standard no. 7A  ESD protection:  HBM JESD22-A114F exceeds 2000 V  MM JESD22-A115-A exceeds 200 V  Multiple package options  Specified from 40 C to +85 C and from 40 C to +125 C 3. Ordering information Table 1. Ordering information Type number Package Temperature range 74HC02D 40 C to +125 C 74HCT02D 74HC02DB 40 C to +125 C 74HCT02DB 74HC02PW 40 C to +125 C 74HCT02PW 74HC02.

74HC02 : The 74HC02; 74HCT02 is a quad 2-input NOR gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. 2. Features and benefits • Wide supply voltage range from 2.0 V to 6.0 V • CMOS low power dissipation • High noise immunity • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B • Input levels: • For 74HC02: CMOS level • For 74HCT02: TTL level • Complies with JEDEC standards: • JESD8C (2.7 V to 3.6 V) • JESD7A (2.0 V to 6.0 V) • ESD protection: • HBM JESD22-A114F exceeds 2000 V • MM JESD22-A115-A exceeds 200 V • Multiple package options • Specified from -40 °C to +85 °C and from -40 °C to +125 °C 3. Or.

74HC02-Q100 : The 74HC02-Q100; 74HCT02-Q100 is a quad 2-input NOR gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC. This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications. 2. Features and benefits • Automotive product qualification in accordance with AEC-Q100 (Grade 1) • Specified from -40 °C to +85 °C and from -40 °C to +125 °C • Wide supply voltage range from 2.0 V to 6.0 V • CMOS low power dissipation • High noise immunity • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B • Input levels: • For 74HC02-Q100:.

74HC02AP : www.DataSheet.co.kr TC74HC02AP/AF/AFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC02AP,TC74HC02AF,TC74HC02AFN Quad 2-Input NOR Gate The TC74HC02A is a high speed CMOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages, including a buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. Note: xxxFN (JEDEC SOP) is not available in Japan. TC74HC02AP Features • • • • • • • • High speed: tp.

74HC02D : • Quad 2-Input NOR Gate 2. General The 74HC02D is a high speed CMOS 2-INPUT NOR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 3 stages, including a buffer output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. 3. Features (1) Wide operating temperature range: Topr = -40 to 125 � (Note 1) (2) High speed: tpd = 6 ns (typ.) at VCC = 5 V (3) Low power dissipation: ICC = 1.0 µA (max) at Ta = 25 � (4) Balanced propagation delays: tPLH ≈.

74HC03 : The 74HC/HCT03 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf = 6 ns 74HC/HCT03 The 74HC/HCT03 provide the 2-input NAND function. The 74HC/HCT03 have open-drain N-transistor outputs, which are not clamped by a diode connected to VCC. In the OFF-state, i.e. when one input is LOW, the output may be pulled to any voltage between GND and VOmax. This allows the device to be used as a LOW-to-HIGH or HIGH-to-LOW level shifter. For digital operation and OR-tied output applications, these devices must have a pull-up resistor to establish .

74HC03 : This device contains four independent 2-input NAND Gates with open-drain outputs. Each gate performs the Boolean function Y = A ● B in positive logic. Device Information(1) PART NUMBER PACKAGE BODY SIZE (NOM) SN74HC03N PDIP (14) 19.30 mm × 6.40 mm SN74HC03NS SO (14) 10.20 mm × 5.30 mm SN74HC03D SOIC (14) 8.70 mm × 3.90 mm SN74HC03PW TSSOP (14) 5.00 mm × 4.40 mm SN54HC03J CDIP (14) 21.30 mm × 7.60 mm SN54HC03FK LCCC (20) 8.9 mm × 8.90 mm (1) For all available packages, see the orderable addendum at the end of the data sheet. 1A 1 1B 2 1Y 3 2A 4 2B 5 2Y 6 GND 7 14 VCC 13 4B 12 4A 11 4Y 10 3B 9 3A 8 3Y Functional pinout of the SN74HC03 Copyri.

74HC03 : The 74HC03; 74HCT03 is a quad 2-input NAND gate with open-drain outputs. Inputs include clamp diodes that enable the use of current limiting resistors to interface inputs to voltages in excess of VCC. 2. Features and benefits • Wide supply voltage range from 2.0 V to 6.0 V • CMOS low power dissipation • High noise immunity • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B • Input levels: • For 74HC03: CMOS level • For 74HCT03: TTL level • Complies with JEDEC standards: • JESD8C (2.7 V to 3.6 V) • JESD7A (2.0 V to 6.0 V) • ESD protection: • HBM JESD22-A114F exceeds 2000 V • MM JESD22-A115-A exceeds 200 V • Specified from -40 °C to +85 °C and from -40 °C to +125 °C 3. Orderi.

74HC03-Q100 : The 74HC03-Q100; 74HCT03-Q100 is a quad 2-input NAND gate with open-drain outputs. Inputs include clamp diodes that enable the use of current limiting resistors to interface inputs to voltages in excess of VCC. This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications. 2. Features and benefits • Automotive product qualification in accordance with AEC-Q100 (Grade 1) • Specified from -40 °C to +85 °C and from -40 °C to +125 °C • Wide supply voltage range from 2.0 V to 6.0 V • CMOS low power dissipation • High noise immunity • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B • Input lev.




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