DatasheetsPDF.com

SP203

Part Number	SP203
Manufacturer	Polyfet RF Devices
Description	SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR
Published	May 28, 2005
Detailed Description	polyfet rf devices SP203 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF ...
Datasheet	SP203 PDF File

Overview

polyfet rf devices SP203 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications.
Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.
"Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency.
TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 12.
0 Watts Single Ended Package Style AP HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 40 Watts Junction to Case Thermal Resistance o 5.
00 C/W Maximum Junction Temperature o 2...

Similar Datasheet

SP200 +5V High-Speed RS-232 Transceivers with 0.1mF Capacitors - Sipex
SP200F (SP200F / SP250F) Rectifier Stacks - VMI
SP200S (SP200S / SP250S) Rectifier Stacks - VMI
SP201 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR - Polyfet RF Devices
SP20100R 20.0 Amp Schottky Barrier Rectifiers - SeCoS
SP2013 P-Channel Enhancement Mode Field Effect Transistor - SamHop
SP20150 VOLTAGE 150V 20.0AMP Schottky Barrier Rectifiers - SeCoS
SP20150R 20.0 Amp Schottky Barrier Rectifiers - SeCoS
SP202 SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR - Polyfet RF Devices
SP2026 +2.7V to +5.5V USB Power Control Switch - Sipex

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)